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RFMD公司生產(chǎn)高性能射頻IC，用于寬帶和電纜通訊領域。生產(chǎn)的產(chǎn)品包括功率放大器、線性放大器、LNA/混合器、求積調(diào)制器/解調(diào)器、上變頻器、前端設備、開關和收發(fā)器等。除了提供標準產(chǎn)品外，RFMD公司還為用戶設計定制產(chǎn)品。公司擁有兩座硅片工廠，其中包括全球最大的GaAsHBT生產(chǎn)廠。公司在美國有設五個設計中心。

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產(chǎn)品分類：

詳細描述, ,The RF5515 is a high performance Low Noise Amplifier design for 802.11a applications (4.9GHz to 5.85GHz) and other portable consumer electronics. This miniature LNA features a high dynamic range and high intercept point with low current consumption around 12mA. The LNA is DC blocked and internally matched to 50? at input and output pins. The IC is featured in a 2.2mm x 2.2mm x 0.5mm module compatible plastic package.,特點,4.9GHz to 5.85GHz Operation,2.3V to 4.8V Single Supply,1.6dB Noise Figure,11dB Typical Gain

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產(chǎn)品分類：

詳細描述, ,The RF5515 is a high performance Low Noise Amplifier design for 802.11a applications (4.9GHz to 5.85GHz) and other portable consumer electronics. This miniature LNA features a high dynamic range and high intercept point with low current consumption around 12mA. The LNA is DC blocked and internally matched to 50? at input and output pins. The IC is featured in a 2.2mm x 2.2mm x 0.5mm module compatible plastic package.,特點,4.9GHz to 5.85GHz Operation,2.3V to 4.8V Single Supply,1.6dB Noise Figure,11dB Typical Gain

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RFDA0035PCK-410

產(chǎn)品分類：

詳細描述,RFMD's RFDA0035 is a dual-channel, digitally controlled variable gain amplifier featuring high linearity over the entire 32 gain control steps. It features independent channel power-up enable, independent channel current adjustability for optimizing DC versus IP3 and a 200Ω differential input and output impedance. , , Download RFMD’s Control Bit Generator Software ,特點,Dual Independent Digitally Controlled VGAs,Bandwidth of 500MHz (-3dB),Gain Control Range = 31dB (1dB Step Size),Differential Input and Output,Max Gain = 19.0dB @ 180MHz,Noise Figure: 7.5dB @ Maximum Gain,High OIP3/P1dB = +42/21dBm @ 180MHz,Relative Phase Shift <1°,Single +5V Supply,Dual 5-Bit Parallel Control Interface,Individual Enable Control for Each VGA,Current Adjustable for IP3 Trade Offs,Small 32-Pin, 5.0mm x 5.0mm, QFN

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產(chǎn)品分類：

詳細描述,The RF5601 is a high performance Low Noise Amplifier design for 802.11a applications (4.9GHz to 5.85GHz) and other portable consumer electronics. This miniature LNA features a high dynamic range and high intercept point with low current consumption around 12mA. The LNA is DC blocked and internally matched to 50? at input and output pins. The IC is featured in a 2.2mm x 2.2mm x 0.5mm module compatible plastic package.,特點,4.9GHz to 5.85GHz Operation,Bypass Function Included,2.3V to 4.8V Single Supply,1.8dB Noise Figure,12 dB Typical Gain,-5.0dB Gain in Bypass Mode

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產(chǎn)品分類：

詳細描述,RFFM4200 is a 1mm x 1mm MIMO module that is intently specified to address IEEE 802.11b/g/n WiFi 2.4GHz to 2.5GHz customer premises equipment (CPE) applications. The module has an integrated three-stage linear power amplifier, TX harmonic filtering and SPDT switch. The RFFM4200 has fully matched input and output for a 50Ω system and incorporates matching networks optimized for linear output power and efficiency. The RFFM4200 is housed in a 6mm x 6mm laminate.,特點,Single Supply Voltage 5.0V,35dB Typical Gain Across Frequency Band,POUT = 25dBm < 2.5% EVM,2.4GHz to 2.5GHz Frequency Range,1mm x 1mm MIMO Architecture,Integrated three-stage PA, filtering and T/R switch.

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產(chǎn)品分類：

詳細描述,The RF7245 is a high-power, high-efficiency, linear power amplifier designed for use as the final RF amplifier in 3V, 50W WCDMA mobile cellular equipment and spread-spectrum systems. This PA is developed for UMTS Band 5 which operates in the 824MHz to 849MHz frequency band. The RF7245 has two digital control pins to select one of three power modes to optimize performance and current drain at lower power levels. The part also has an integrated directional coupler which eliminates the need for an external discrete coupler at the output. The RF7245 meets the spectral linearity requirements of High Speed Downlink Packet Access (HSDPA), High Speed Uplink Packet Access (HSUPA), and Long Term Evolution (LTE) data transmission and is assembled in a 10-pin, 3mm x 3mm module.,特點,HSDPA /HSUPA /HSPA+/LTE,Low Voltage Positive Bias Supply (3.0V to 4.2V),+28.25dBm Linear Output Power (+27.25dBm HSDPA and HSPA+),High Efficiency Operation49% at POUT = +28.25dBm,Low Quiescent Current in Low Power Mode: 5mA when using a DC/DC converter,Internal Voltage Regulator Eliminates the Need for External Reference Voltage (VREF),3-Mode Power States with Digital Control Interface,Optimized for DC/DC Converter Operation,Integrated Power Coupler,Integrated Blocking and Collector Decoupling Capacitors

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產(chǎn)品分類：

詳細描述, ,RFMD’s SGC2463Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC2463Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC2463Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50Ω. ,特點,Single Fixed 3V Supply,No Dropping Resistor Required,Patented Self-Bias Circuitry,P1dB = 10.5dBm at 1950MHz,OIP3 = 23.5dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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產(chǎn)品分類：

詳細描述,The SGA5489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點,High Gain: 17.9dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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產(chǎn)品分類：

詳細描述,The SGA6489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點,High Gain: 17.5dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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產(chǎn)品分類：

詳細描述, ,The SPF5189Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5189Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers. ,特點,Ultra-Low Noise Figure = 0.60dB at 900MHz,Gain = 18.7dB at 900MHz,High Linearity: OIP3 = 39.5dBm at 1960MHz,P1dB = 22.7dBm at 1960MHz,Single-Supply Operation: 5V at IDQ = 90mA,Flexible Biasing Options: 3V to 5V Adjustable Current,Broadband Internal Matching

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