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RFMD公司生產(chǎn)高性能射頻IC，用于寬帶和電纜通訊領(lǐng)域。生產(chǎn)的產(chǎn)品包括功率放大器、線性放大器、LNA/混合器、求積調(diào)制器/解調(diào)器、上變頻器、前端設(shè)備、開關(guān)和收發(fā)器等。除了提供標(biāo)準(zhǔn)產(chǎn)品外，RFMD公司還為用戶設(shè)計定制產(chǎn)品。公司擁有兩座硅片工廠，其中包括全球最大的GaAsHBT生產(chǎn)廠。公司在美國有設(shè)五個設(shè)計中心。

為您找到相關(guān)結(jié)果 2279 條 212 /228

產(chǎn)品分類：

詳細(xì)描述, ,RFMD’s RFDA2077 is a dual channel digital controlled variable gain amplifier featuring high linearity over the entire gain control range with noise figure less than 6.5dB in its maximum gain state. The gains of two 6-bit digital step attenuators are programmed with a serial mode control interface (SPI). The RFDA2077 is packaged in a small 7.0mm x 7.0mm leadless laminate MCM, which contains plated through thermal vias for ultra low thermal resistance. This module is easy to use with no external matching components required. , , Download RFMD’s Control Bit Generator Software ,特點(diǎn),Dual Channel VGA,Frequency Range 1700MHz to 2400MHz,Full Internal Matching and No External Bias Inductors,Two 6-Bit Digital Step Attenuators,12-Bit SPI Serial Control Programming,High Channel Isolation = 50dBc,Max Gain = 12.2dB?at?1800MHz,Gain Control Range = 31.5dB (0.5dB step size),High OIP3/P1dB = +41/24.5dBm at?1800MHz,Single +5V Supply,Small 32-Pin, 7.0mm x 7.0mm, MCM,Power-up Programming

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產(chǎn)品分類：

詳細(xì)描述, ,RFMD’s RFDA2077 is a dual channel digital controlled variable gain amplifier featuring high linearity over the entire gain control range with noise figure less than 6.5dB in its maximum gain state. The gains of two 6-bit digital step attenuators are programmed with a serial mode control interface (SPI). The RFDA2077 is packaged in a small 7.0mm x 7.0mm leadless laminate MCM, which contains plated through thermal vias for ultra low thermal resistance. This module is easy to use with no external matching components required. , , Download RFMD’s Control Bit Generator Software ,特點(diǎn),Dual Channel VGA,Frequency Range 1700MHz to 2400MHz,Full Internal Matching and No External Bias Inductors,Two 6-Bit Digital Step Attenuators,12-Bit SPI Serial Control Programming,High Channel Isolation = 50dBc,Max Gain = 12.2dB?at?1800MHz,Gain Control Range = 31.5dB (0.5dB step size),High OIP3/P1dB = +41/24.5dBm at?1800MHz,Single +5V Supply,Small 32-Pin, 7.0mm x 7.0mm, MCM,Power-up Programming

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產(chǎn)品分類：

詳細(xì)描述, ,The RF5612 is a linear power amplifier IC designed specifically for medium power applications. The device is manufactured on an advanced BiFET Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in LTE Up Link (UL) mobile and Data Cards and 802.11e mobile applications. The device is provided in a 4mm?x?4mm?x?0.975mm, 10-Pin, leadless chip carrier with a backside ground. The RF5612 is designed to maintain linearity over a wide range of supply voltages and power outputs.,特點(diǎn),Single Supply Voltage 3.3V,32dB Typical Gain Across Frequency Band,POUT?= 27dBm, LTE UL,POUT?= 25dBm < 2.5% EVM,2.5GHz to 2.7GHz Frequency Range,Output Power Detector,Optimized for a 50W System

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產(chǎn)品分類：

詳細(xì)描述,RFFM4200 is a 1mm x 1mm MIMO module that is intently specified to address IEEE 802.11b/g/n WiFi 2.4GHz to 2.5GHz customer premises equipment (CPE) applications. The module has an integrated three-stage linear power amplifier, TX harmonic filtering and SPDT switch. The RFFM4200 has fully matched input and output for a 50Ω system and incorporates matching networks optimized for linear output power and efficiency. The RFFM4200 is housed in a 6mm x 6mm laminate.,特點(diǎn),Single Supply Voltage 5.0V,35dB Typical Gain Across Frequency Band,POUT = 25dBm < 2.5% EVM,2.4GHz to 2.5GHz Frequency Range,1mm x 1mm MIMO Architecture,Integrated three-stage PA, filtering and T/R switch.

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RFFM4203PCBA-410

產(chǎn)品分類：

詳細(xì)描述,The RFFM4203 provides a complete integrated solution in a single Front End Module (FEM) for WiFi 802.11b/g/n and Bluetooth,?, systems. The ultra-small form factor and integrated matching greatly reduces the number of external components and layout area in the customer application. This simplifies the total Front End solution by reducing the bill of materials, system footprint, and manufacturability cost. The RFFM4203 integrates a 2.4GHz to 2.5GHz Power Amplifier (PA), Low Noise Amplifier (LNA) with bypass mode, power detector coupler for improved accuracy, and some filtering for harmonic rejection. The device is provided in a 3mm x 3mm x 1.0mm, 16-pin package. This module meets or exceeds the RF Front End needs of IEEE 802.11b/g/n WiFi RF systems.,特點(diǎn),Integrated 2.4GHz to 2.5GHz b/g/n Amplifier, LNA with bypass mode, SP3T Switch, and Power Detector Coupler,Single Supply Voltage 3.0V to 5V,POUT = 21.5dBm, 5V <3% Dynamic EVM,POUT = 19dBm, 3.3V <3% Dynamic EVM

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產(chǎn)品分類：

詳細(xì)描述,The RFFM4203 provides a complete integrated solution in a single Front End Module (FEM) for WiFi 802.11b/g/n and Bluetooth,?, systems. The ultra-small form factor and integrated matching greatly reduces the number of external components and layout area in the customer application. This simplifies the total Front End solution by reducing the bill of materials, system footprint, and manufacturability cost. The RFFM4203 integrates a 2.4GHz to 2.5GHz Power Amplifier (PA), Low Noise Amplifier (LNA) with bypass mode, power detector coupler for improved accuracy, and some filtering for harmonic rejection. The device is provided in a 3mm x 3mm x 1.0mm, 16-pin package. This module meets or exceeds the RF Front End needs of IEEE 802.11b/g/n WiFi RF systems.,特點(diǎn),Integrated 2.4GHz to 2.5GHz b/g/n Amplifier, LNA with bypass mode, SP3T Switch, and Power Detector Coupler,Single Supply Voltage 3.0V to 5V,POUT = 21.5dBm, 5V <3% Dynamic EVM,POUT = 19dBm, 3.3V <3% Dynamic EVM

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產(chǎn)品分類：

詳細(xì)描述, ,The RFFM7600 is a Front End Module, designed for the WiMAX 2.5GHz to 2.7GHz market with LTE bands between 2.5GHz to 2.7GHz. It consists of a Power Amplifier with Tx harmonic filtering and T/R switching. RFFM7600 is provided in a 6mm x 6mm laminate package, incorporating SMD's for filtering and matching.,特點(diǎn),34dB Typical Gain Across Frequency Band,POUT = 27dBm <2.5% EVM WiMAX,2.5GHz to 2.7GHz Frequency Range,POUT = 24dBm, -48dBc ACPR LTE DL,Integrated 3-stage PA, filtering and T/R switch.,Integrated Power Detector and High

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產(chǎn)品分類：

詳細(xì)描述,The SGA4463Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點(diǎn),High Gain: 17dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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產(chǎn)品分類：

詳細(xì)描述,RFMD’s SGC4263Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4263Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4263Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50Ω.,特點(diǎn),Single Fixed 3V Supply,No Dropping Resistor Required,Patented Self-Bias Circuitry,P1dB=15.1dBm at 1950MHz,OIP3=30dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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產(chǎn)品分類：

詳細(xì)描述,RFMD’s SGC-6389Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SGC-6389Z does not require a dropping resistor as compared to traditional Darlington amplifiers. The SGC-6389Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50?.,特點(diǎn),Single Fixed 5V Supply,No Dropping Resistor Required,Patented Self Bias Circuitry,Gain = 12.8dBm at 1950MHz,P1dB = 18.6dBm at 1950MHz,OIP3 = 34.5dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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