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RFMD公司生產(chǎn)高性能射頻IC，用于寬帶和電纜通訊領(lǐng)域。生產(chǎn)的產(chǎn)品包括功率放大器、線性放大器、LNA/混合器、求積調(diào)制器/解調(diào)器、上變頻器、前端設(shè)備、開關(guān)和收發(fā)器等。除了提供標(biāo)準(zhǔn)產(chǎn)品外，RFMD公司還為用戶設(shè)計(jì)定制產(chǎn)品。公司擁有兩座硅片工廠，其中包括全球最大的GaAsHBT生產(chǎn)廠。公司在美國(guó)有設(shè)五個(gè)設(shè)計(jì)中心。

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型號(hào)：

RFFM4203PCBA-410

產(chǎn)品分類：

詳細(xì)描述,The RFFM4203 provides a complete integrated solution in a single Front End Module (FEM) for WiFi 802.11b/g/n and Bluetooth,?, systems. The ultra-small form factor and integrated matching greatly reduces the number of external components and layout area in the customer application. This simplifies the total Front End solution by reducing the bill of materials, system footprint, and manufacturability cost. The RFFM4203 integrates a 2.4GHz to 2.5GHz Power Amplifier (PA), Low Noise Amplifier (LNA) with bypass mode, power detector coupler for improved accuracy, and some filtering for harmonic rejection. The device is provided in a 3mm x 3mm x 1.0mm, 16-pin package. This module meets or exceeds the RF Front End needs of IEEE 802.11b/g/n WiFi RF systems.,特點(diǎn),Integrated 2.4GHz to 2.5GHz b/g/n Amplifier, LNA with bypass mode, SP3T Switch, and Power Detector Coupler,Single Supply Voltage 3.0V to 5V,POUT = 21.5dBm, 5V <3% Dynamic EVM,POUT = 19dBm, 3.3V <3% Dynamic EVM

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型號(hào)：

產(chǎn)品分類：

詳細(xì)描述,The RFFM4203 provides a complete integrated solution in a single Front End Module (FEM) for WiFi 802.11b/g/n and Bluetooth,?, systems. The ultra-small form factor and integrated matching greatly reduces the number of external components and layout area in the customer application. This simplifies the total Front End solution by reducing the bill of materials, system footprint, and manufacturability cost. The RFFM4203 integrates a 2.4GHz to 2.5GHz Power Amplifier (PA), Low Noise Amplifier (LNA) with bypass mode, power detector coupler for improved accuracy, and some filtering for harmonic rejection. The device is provided in a 3mm x 3mm x 1.0mm, 16-pin package. This module meets or exceeds the RF Front End needs of IEEE 802.11b/g/n WiFi RF systems.,特點(diǎn),Integrated 2.4GHz to 2.5GHz b/g/n Amplifier, LNA with bypass mode, SP3T Switch, and Power Detector Coupler,Single Supply Voltage 3.0V to 5V,POUT = 21.5dBm, 5V <3% Dynamic EVM,POUT = 19dBm, 3.3V <3% Dynamic EVM

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型號(hào)：

產(chǎn)品分類：

詳細(xì)描述, ,The RFFM7600 is a Front End Module, designed for the WiMAX 2.5GHz to 2.7GHz market with LTE bands between 2.5GHz to 2.7GHz. It consists of a Power Amplifier with Tx harmonic filtering and T/R switching. RFFM7600 is provided in a 6mm x 6mm laminate package, incorporating SMD's for filtering and matching.,特點(diǎn),34dB Typical Gain Across Frequency Band,POUT = 27dBm <2.5% EVM WiMAX,2.5GHz to 2.7GHz Frequency Range,POUT = 24dBm, -48dBc ACPR LTE DL,Integrated 3-stage PA, filtering and T/R switch.,Integrated Power Detector and High

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型號(hào)：

產(chǎn)品分類：

詳細(xì)描述,The SGA4463Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點(diǎn),High Gain: 17dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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型號(hào)：

產(chǎn)品分類：

詳細(xì)描述,RFMD’s SGC4263Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4263Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4263Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50Ω.,特點(diǎn),Single Fixed 3V Supply,No Dropping Resistor Required,Patented Self-Bias Circuitry,P1dB=15.1dBm at 1950MHz,OIP3=30dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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型號(hào)：

產(chǎn)品分類：

詳細(xì)描述,RFMD’s SGC-6389Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SGC-6389Z does not require a dropping resistor as compared to traditional Darlington amplifiers. The SGC-6389Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50?.,特點(diǎn),Single Fixed 5V Supply,No Dropping Resistor Required,Patented Self Bias Circuitry,Gain = 12.8dBm at 1950MHz,P1dB = 18.6dBm at 1950MHz,OIP3 = 34.5dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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型號(hào)：

產(chǎn)品分類：

詳細(xì)描述,RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to 2500MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.,特點(diǎn),Lower RTH for increased MTTF 108 Hours at TLead = 85°C,On-Chip Active Bias Control, Single 5V Supply,Excellent Linearity: +43dBm typical OIP3 at 1960MHz,High P1dB:?+25dBm typical,High Gain:+18.5dB at 850MHz,Efficient: Consumes Only 575mW

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型號(hào)：

產(chǎn)品分類：

射頻混合器

詳細(xì)描述,The RF2053 is a low power high performance wideband RF frequency conversion chip with integrated local oscillator (LO) generation and RF mixer. The RF synthesizer includes an integrated fractional-N phase locked loop that can control an external VCO to produce a low-phase noise LO signal with a very fine frequency resolution., ,The VCO output frequency can be divided by 1 2 or 4 in the LO divider whose output is buffered and drives the built-in RF mixer which converts the signal into the required frequency band. The mixer bias current can be programmed dependent on the required performance and available supply current. The LO generation blocks have been designed to operate with external VCOs covering the frequency range from 300MHz to 2400MHz. The RF mixer is very broad band and operates from 30MHz to 2500MHz at the input and output enabling both up and down conversion. An external crystal of between 10MHz and 52MHz or an external reference source of between 10MHz and 104MHz can be used with the RF2053 to accommodate a variety of reference frequency options. All on-chip registers are controlled through a simple three-wire serial interface. The RF2053 is designed for 2.7V to 3.6V operation for compatibility with portable battery powered devices. It is available in a plastic 32-pin 5mmx5mm QFN package. ,特點(diǎn),Fractional-N Synthesizer,Very Fine Frequency Resolution 1.5Hz for 26MHz Reference,300MHz to 2400MHz External VCO Frequency Range,On-Chip Crystal-Sustaining Circuit With Programmable Loading Capacitors,Integrated LO Buffer and LO Divider,High-Linearity RF Mixer,Mixer Input IP3 +23dBm Typ.,Mixer Bias Adjustable for Low Power Operation,Mixer Frequency Range 30MHz to 2500MHz,2.7V to 3.6V Power Supply,Low Current Consumption 50mA to 70mA at 3V,3-Wire Serial Interface

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型號(hào)：

產(chǎn)品分類：

射頻混合器

詳細(xì)描述, ,The RFFC5072 is a reconfigurable frequency conversion device with integrated fractional-N phased locked loop (PLL) synthesizer, voltage controlled oscillator (VCO) and a high linearity mixer. The fractional-N synthesizer takes advantage of an advanced sigma-delta modulator that delivers ultra-fine step sizes and low spurious products. The PLL/VCO engine combined with an external loop filter allows the user to generate local oscillator (LO) signals from 85MHz to 4200MHz. The LO signal is buffered and routed to the integrated RF mixer which is used to convert frequencies ranging from 30MHz to 6000MHz. The mixer bias current is programmable and can be reduced for applications requiring lower power consumption. , ,RFFC5072?can be configured to work as a signal source by bypassing the integrated mixer. Device programming is achieved via a simple 3-wire serial interface. In addition, a unique programming mode allows up to four devices to be controlled from a common serial bus. This eliminates the need for separate chip-select control lines between each device and the host controller. Up to six general purpose outputs are provided, which can be used to access internal signals (LOCK signal, for example) or to control front end components. The RFFC5072 operates with a 2.7V to 3.3V power supply. ,特點(diǎn),85MHz to 4200MHz LO Frequency Range,Fractional-N Synthesizer with Very Low Spurious Levels,Typical Step Size 1.5Hz,Fully Integrated Low Phase Noise VCO and LO Buffers,High Linearity RF Mixer(s),30MHz to 6000MHz Mixer Frequency Range,Input IP3 +23dBm,Mixer Bias Adjustable for Low Power Operation,2.7V to 3.3V Power Supply,Low Current Consumption,3- or 4-Wire Serial Interface

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型號(hào)：

產(chǎn)品分類：

詳細(xì)描述,The RF7201 is a high-power, high-efficiency, dual-band, linear power amplifier designed for use as final amplification stages in 3V, 50Ω WCDMA mobile cellular equipment and spread-spectrum systems. This PA is developed for UMTS Bands 1 and 8 which operates in the transmit frequency bands from 1920MHz to 1980MHz and 880MHz to 915MHz, respectively. The RF7201 uses two digital control pins to select one of three power modes to optimize performance and current drain at lower power levels. The part also has one integrated directional coupler output which eliminates the need for an external discrete coupler for each band. The RF7201 is fully HSDPA compliant and is assembled on a 14-pin, 4mm x 5mm laminate module.,特點(diǎn),Dual-Band 1/8 UMTS PA,HSDPA Compliant,Low Voltage Positive Bias Supply (3.0V to 4.2V),High Efficiency Operation: 41% at POUT=+28.0dBm (Band 1) 41% at POUT=+28.5dBm (Band 8) 19% at POUT=+19.0dBm (without DC/DC converter),Low Quiescent Current in Low Power Mode: 16mA,Internal Voltage Regulator Eliminates the Need for External Reference Voltage (VREF),Common VMODE Control Lines Between Bands,3-Mode Power States for Each Band with Digital Control Interface,Supports DC/DC Converter Operation (VCC Pin),Integrated Power Coupler,Integrated Blocking and Collector Decoupling Caps

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