IGCM10F60GAXKMA1
型號: IGCM10F60GAXKMA1
類別: 集成電路
描述: * Infineon reverse conducting IGBTs with monolithic body diode * Rugged SOI gate driver technology with stability against transient and negative voltage * Allowable negative VS potential up to -11V for signal transmission at VBS=15V * Integrated bootstrap functionality * Over current shutdown * Temperature monitor ? Under-voltage lockout at all channels * Low side emitter pins accessible for all phase current monitoring (open emitter) * Cross-conduction prevention * All of 6 switches turn off during protection * Lead-free terminal plating; RoHS compliant
品牌官網(wǎng): www.infineon.com
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- 常見問題
- 參數(shù)
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參數(shù) | 數(shù)值 |
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封裝外殼
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24-PowerDIP 模塊(1.028",26.10mm)
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類型
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IGBT
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電壓
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600V
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電壓 - 隔離
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2000Vrms
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應(yīng)用場景
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消費(fèi)電子
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功能
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驅(qū)動功能
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是否封裝
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已封裝
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是否切割
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已切割
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是否量產(chǎn)(量產(chǎn)或非量產(chǎn))
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量產(chǎn)
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其他
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非加密
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