IRLL110PBF
型號: IRLL110PBF
類別: 集成電路
描述: The IRLL110PBF is a 100V single N-channel HEXFET? Power MOSFET, third generation HEXFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The power MOSFET is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place, it has added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface mount application. . Dynamic dV/dt rating . Repetitive avalanche rated . Logic level gate drive . RDS (ON) Specified at VGS = 4 and 5V . Fast switching
品牌官網(wǎng): www.infineon.com
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- 參數(shù)
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參數(shù) | 數(shù)值 |
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晶體管極性
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N溝道
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在電阻RDS(上)
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540mohm
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電壓 @ Rds測量
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5V
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閾值電壓 Vgs
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\-
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功耗 Pd
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3.1W
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晶體管封裝類型
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SOT-223
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針腳數(shù)
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3引腳
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工作溫度最高值
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150°C
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產(chǎn)品范圍
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\-
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汽車質(zhì)量標準
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\-
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MSL
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\-
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SVHC(高度關(guān)注物質(zhì))
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No SVHC (17-Dec-2015)
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