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型號(hào)： K4T1G164QE-HCE6

類別： 集成電路

封裝： FBGA

描述： The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features ? JEDEC standard VDD= 1.8V ± 0.1V Power Supply ?VDDQ= 1.8V ± 0.1V ? 333MHz fCKfor 667Mb/sec/pin, 400MHz fCKfor 800Mb/sec/pin ? 8 Banks ? Posted CAS ? Programmable CASLatency: 3, 4, 5, 6 ? Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5 ? Write Latency(WL) = Read Latency(RL) -1 ? Burst Length: 4 , 8(Interleave/nibble sequential) ? Programmable Sequential / Interleave Burst Mode ? Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) ? Off-Chip Driver(OCD) Impedance Adjustment ? On Die Termination ? Special Function Support ? - 50ohm ODT ? - High Temperature Self-Refresh rate enable ? Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE <95 °C ? All of products are Lead-Free, Halogen-Free, and RoHS compliant

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