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型號(hào)： TS1GSK64V6H

類(lèi)別： 集成電路

描述： The TS1GSK64V6H is a 512M x 8 DRAM high-speed low power memory DDR3 SO-DIMM use DDR3 SDRAM and a 2048 bits serial EEPROM on a 240-pin printed circuit board. It is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets. The synchronous design allows precise cycle control with the use of system clock. The data I/O transactions are possible on both edges of DQS, range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. . 8-bit Pre-fetch . Internal calibration through ZQ pin . On die termination with ODT pin . Serial presence detect with EEPROM . Asynchronous reset

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