FDC642P
型號: FDC642P
品牌: 安森美/飛兆
類別: Nor閃存
描述: Description: FDC642P is a P-Channel MOSFET with a drain current of -6A and a drain-source voltage of -20V.Features:- Low On-Resistance- Low Input Capacitance- Low Threshold Voltage- High Power D
品牌官網(wǎng): www.fairchildsemi.com
- 賣盤信息
- 參數(shù)
- 常見問題
參數(shù) | 數(shù)值 |
---|---|
Brand
|
FSC
|
DateCode
|
08+
|
Package/Case
|
SOT23-6
|
MaximumContinuousDrainCurrent
|
4A
|
MaximumDrainSourceVoltage
|
20V
|
MaximumDrainSourceResistance
|
100mΩ
|
MinimumGateThresholdVoltage
|
0.4V
|
MaximumGateSourceVoltage
|
-12V,+12V
|
TransistorConfiguration
|
Single
|
PinCount
|
6
|
ChannelMode
|
Enhancement
|
MaximumPowerDissipation
|
1.6W
|
Height
|
1mm
|
TypicalTurn-OffDelayTime
|
120ns
|
TypicalInputCapacitance@Vds
|
700pF@-10V
|
TypicalGateCharge@Vgs
|
11nC@4.5V
|
MinimumOperatingTemperature
|
-55°C
|
TypicalTurn-OnDelayTime
|
6ns
|
NumberofElementsperChip
|
1
|
Width
|
1.7mm
|
TransistorMaterial
|
Si
|
Dimensions
|
3x1.7x1mm
|
Length
|
3mm
|
MaximumOperatingTemperature
|
+150°C
|
Series
|
PowerTrench
|
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