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型號： NTE6400

類別： IGBT陣列

描述： Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable “N” type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse pulse current make these devices useful in oscillators, timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conventional silicon or germanium transistors. These devices are intended for applications where circuit economy is of primary importance. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) RMS Power Dissipation, PD ?? Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .450mW ?? Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW Derate Above 25°C? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9mW/°C RMS Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Peak Emitter Current (TJ = +150°C), IE(peak) . . . . . . . . . . . . . . . . . . . . . . . . . 2A Emitter Reverse Voltage (TJ = +150°C)? . . . . . . . . . . . . . . . . . . . . . . . . . . . .60V Interbase Voltage, VBB ?? NTE6400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V ?? NTE6400A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V Operating Temperature Range, Topr ?? Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +140°C ?? Stabilized? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . 0.16°C/mW

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