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型號： NTE6401

類別： IGBT陣列

封裝： TO-18

描述： Description: The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: ?Low Peak Point Current: 5μA (Max) ?Low Emitter Reverse Current: .005μA (Typ) ?Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW RMS Emitter Current, IE(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Peak Pulse Emitter Current (Note 2), iE . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Emitter Reverse Voltage, VB2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Interbase Voltage, VB2B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . –65° to 125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Note 1 Derate 3mW/°C increase in ambient temperature. The total power dissipation (available power to Emitter and Base–Two) must be limited by the external circuitry. Note 2 Capacitor discharge – 10μF or less, 30 volts or less

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