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型號： NTE64

類別： IGBT陣列

描述： Description: The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise small–signal amplifiers and applications requiring fast switching times. Features: High Current Gain–Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA Low Noise Figure: NF = 2dB Typ @ f = 1GHz High Power Gain: Gpe = 10dB Min @ f = 1GHz Third Order Intercept: +23dBm Typ Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . .30mA Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . 0.375W Derate Above 25°C? . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . -65° to +150°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . 300°C/W

品牌官網(wǎng)： www.nteinc.com