NTE335
型號: NTE335
類別: IGBT陣列
描述: Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: ? Specified 12.5V, 30MHz Characteristics: ?? Output Power = 80W ?? Minimum Gain = 12dB ?? Efficiency = 50% ? Available in Two Different Package Designs: ?? NTE335 (W52N, Flange Mount) ?? NTE336 (T93D, Stud Mount)
品牌官網(wǎng): www.nteinc.com
- 賣盤信息
- 常見問題
- 參數(shù)
-
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參數(shù) | 數(shù)值 |
---|---|
Maximum Transition Frequency
|
30 MHz
|
Minimum DC Current Gain
|
10@5A@5 V
|
Maximum Collector Base Voltage
|
45 V
|
Maximum Power Dissipation
|
250000 mW
|
Mounting
|
Screw
|
Pin_Count
|
5
|
Maximum Collector Emitter Volt...
|
25 V
|
Material
|
Si
|
Maximum Collector Emitter Volt...
|
20 to 30 V
|
Maximum Emitter Base Voltage
|
4 V
|
Operating Temperature
|
-65 to 150 °C
|
Minimum DC Current Gain Range
|
2 to 30
|
Output Power
|
80 W
|
Number of Elements per Chip
|
1
|
Maximum DC Collector Current
|
20 A
|
Maximum DC Collector Current R...
|
8 to 100 A
|
Configuration
|
Single
|
Type
|
NPN
|
Dimension
|
24.77 x 12.1 x 6.6 mm
|
lead free status
|
pb free
|