NTE313
型號: NTE313
類別: IGBT陣列
描述: Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.
品牌官網(wǎng): www.nteinc.com
- 賣盤信息
- 常見問題
- 參數(shù)
-
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參數(shù) | 數(shù)值 |
---|---|
Maximum Transition Frequency
|
530(Typ) MHz
|
Minimum DC Current Gain
|
20@2mA@10 V
|
Maximum Collector Base Voltage
|
30 V
|
Maximum Power Dissipation
|
150 mW
|
Mounting
|
Surface Mount
|
Type
|
NPN
|
Maximum Collector Emitter Volt...
|
30 V
|
Material
|
Si
|
Maximum Collector Emitter Volt...
|
30 to 40 V
|
Maximum Emitter Base Voltage
|
4 V
|
Operating Temperature
|
-60 to 150 °C
|
Minimum DC Current Gain Range
|
2 to 30
|
Number of Elements per Chip
|
1
|
Maximum DC Collector Current
|
0.02 A
|
Maximum DC Collector Current R...
|
0.001 to 0.06 A
|
Configuration
|
Single
|
Pin_Count
|
3
|
Dimension
|
2.02(Max) x 3.81(Max) mm
|