NTE478
型號(hào): NTE478
類別: IGBT陣列
描述: Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating conditions, and is internally input matched to optimize power gain and efficiency over the band. Features: ? Designed for VHF Military and Commercial Equipment ? 100W Min with Greater than 6.0dB Gain ? Withstands Infinite VSWR under Operating Conditions ? Low Intermodulation Distortion (–32dB) ? Diffused Emitter Resistors
品牌官網(wǎng): www.nteinc.com
- 賣盤信息
- 常見問題
- 參數(shù)
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平臺(tái)購物流程是怎樣的?
平臺(tái)商品來源有保障嗎?
平臺(tái)上展示的商品數(shù)量、價(jià)格及相關(guān)信息準(zhǔn)確嗎?
平臺(tái)支持BOM詢價(jià)嗎?
平臺(tái)下單后什么時(shí)候能發(fā)貨?多久能到?
拍明芯城的訂單如何跟蹤?
拍明芯城的訂單可以提供合同嗎?
拍明芯城的發(fā)票如何開具?
參數(shù) | 數(shù)值 |
---|---|
Minimum DC Current Gain
|
10@5A@6 V
|
Maximum Collector Base Voltage
|
36 V
|
Maximum Power Dissipation
|
270000 mW
|
Mounting
|
Screw
|
Pin_Count
|
3
|
Maximum Collector Emitter Volt...
|
18 V
|
Material
|
Si
|
Maximum Collector Emitter Volt...
|
<20 V
|
Maximum Emitter Base Voltage
|
4 V
|
Operating Temperature
|
-65 to 200 °C
|
Minimum DC Current Gain Range
|
2 to 30
|
Output Power
|
100(Min) W
|
Number of Elements per Chip
|
1
|
Maximum DC Collector Current
|
20 A
|
Maximum DC Collector Current R...
|
8 to 100 A
|
Configuration
|
Single Quad Emitter
|
Type
|
NPN
|
Dimension
|
24.78 x 12.7 x 6.85 mm
|