NTE488
型號: NTE488
類別: IGBT陣列
描述: Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: ? High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz ? TO39 Metal Sealed Package for High Reliability ? Emitter Electrode is Connected Electrically to the Case Application: ? 1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications.
品牌官網(wǎng): www.nteinc.com
- 賣盤信息
- 常見問題
- 參數(shù)
-
平臺購物流程是怎樣的?
平臺商品來源有保障嗎?
平臺上展示的商品數(shù)量、價格及相關(guān)信息準(zhǔn)確嗎?
平臺支持BOM詢價嗎?
平臺下單后什么時候能發(fā)貨?多久能到?
拍明芯城的訂單如何跟蹤?
拍明芯城的訂單可以提供合同嗎?
拍明芯城的發(fā)票如何開具?
參數(shù) | 數(shù)值 |
---|---|
Minimum DC Current Gain
|
10@0.1A@10 V
|
Maximum Collector Base Voltage
|
35 V
|
Maximum Power Dissipation
|
1000 mW
|
Mounting
|
Through Hole
|
Pin_Count
|
3
|
Maximum Collector Emitter Volt...
|
17 V
|
Material
|
Si
|
Maximum Collector Emitter Volt...
|
<20 V
|
Maximum Emitter Base Voltage
|
4 V
|
Operating Temperature
|
-65 to 175 °C
|
Minimum DC Current Gain Range
|
2 to 30
|
Output Power
|
4(Typ) W
|
Number of Elements per Chip
|
1
|
Maximum DC Collector Current
|
1 A
|
Maximum DC Collector Current R...
|
0.5 to 2 A
|
Configuration
|
Single
|
Type
|
NPN
|
Dimension
|
6.6(Max) x 9.39(Max) mm
|