NTD5806NT4G
型號: NTD5806NT4G
類別: FET/MOSFET 單體
描述: ON Semiconductor MOSFET, N溝道, Si, Vds=40 V, 33 A, 3引腳 DPAK封裝
品牌官網(wǎng): www.onsemi.com
- 賣盤信息
- 常見問題
- 參數(shù)
-
平臺購物流程是怎樣的?
平臺商品來源有保障嗎?
平臺上展示的商品數(shù)量、價格及相關(guān)信息準(zhǔn)確嗎?
平臺支持BOM詢價嗎?
平臺下單后什么時候能發(fā)貨?多久能到?
拍明芯城的訂單如何跟蹤?
拍明芯城的訂單可以提供合同嗎?
拍明芯城的發(fā)票如何開具?
參數(shù) | 數(shù)值 |
---|---|
ROHS標(biāo)準(zhǔn)
|
符合
|
防靜電標(biāo)準(zhǔn)認(rèn)證
|
符合
|
COO(CountryofOrigin)
|
MY
|
最大漏源電壓
|
40V
|
最大漏源電阻值
|
26mΩ
|
最大柵閾值電壓
|
2.5V
|
最大柵源電壓
|
-20V、+20V
|
封裝類型
|
DPAK
|
安裝類型
|
表面貼裝
|
引腳數(shù)目
|
3
|
類別
|
功率MOSFET
|
最大功率耗散
|
40W
|
每片芯片元件數(shù)目
|
1
|
最低工作溫度
|
-55°C
|
典型柵極電荷@Vgs
|
17nC@10V
|
典型輸入電容值@Vds
|
860pF@25V
|
典型關(guān)斷延遲時間
|
14.2ns
|
尺寸
|
6.73x6.22x2.38mm
|
Channel Mode
|
Enhancement
|
Automotive
|
No
|
Package Width
|
6.22(Max)
|
HTS
|
8541.29.00.95
|
Maximum Continuous Drain Curre...
|
33
|
Military
|
No
|
PCB changed
|
2
|
Standard Package Name
|
TO-252
|
Product Category
|
Power MOSFET
|
Typical Rise Time (ns)
|
49|93.7
|
Maximum IDSS (uA)
|
1
|
Typical Gate Charge @ Vgs (nC)
|
17@10V
|
Configuration
|
Single
|
Typical Turn-Off Delay Time (n...
|
14.2|19.8
|
Number of Elements per Chip
|
1
|
Maximum Gate Threshold Voltage...
|
2.5
|
Channel Type
|
N
|
Maximum Operating Temperature ...
|
175
|
Lead Shape
|
Gull-wing
|
EU RoHS
|
Compliant with Exemption
|
Mounting
|
Surface Mount
|
Typical Input Capacitance @ Vd...
|
860@25V
|
Pin Count
|
3
|
Package Height
|
2.38(Max)
|
Typical Fall Time (ns)
|
4.3|2.6
|
Package Length
|
6.73(Max)
|
Part Status
|
Obsolete
|
Maximum Power Dissipation (mW)
|
40000
|
Minimum Operating Temperature ...
|
-55
|
Maximum Gate Source Leakage Cu...
|
100
|
Supplier Package
|
DPAK
|
Maximum Drain Source Voltage (...
|
40
|
Maximum Gate Source Voltage (V...
|
±20
|
ECCN (US)
|
EAR99
|
Typical Turn-On Delay Time (ns...
|
10.6|8
|
Maximum Drain Source Resistanc...
|
19@10V
|
Tab
|
Tab
|
Packaging
|
Tape and Reel
|
Typical Gate Charge @ 10V (nC)
|
17
|