恒捷供應(yīng)鏈
NTLJS3113PT1G
加入對(duì)比型號(hào)： NTLJS3113PT1G
類別： FET/MOSFET 單體
描述： Trans MOSFET P-CH 20V 5.8A 6-Pin WDFN T/R
品牌官網(wǎng)： www.onsemi.com
- 賣盤信息
- 常見問題
- 參數(shù)
-
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| 參數(shù) | 數(shù)值 |
|---|---|
|
制造商
|
ONSemiconductor
|
|
產(chǎn)品種類
|
MOSFET
|
|
安裝風(fēng)格
|
SMD/SMT
|
|
通道數(shù)量
|
1Channel
|
|
晶體管極性
|
P-Channel
|
|
Vds-漏源極擊穿電壓
|
20V
|
|
Id-連續(xù)漏極電流
|
5.8A
|
|
RdsOn-漏源導(dǎo)通電阻
|
90mOhms
|
|
Vgsth-柵源極閾值電壓
|
670mV
|
|
Vgs-柵極-源極電壓
|
8V
|
|
Qg-柵極電荷
|
13nC
|
|
最小工作溫度
|
-55C
|
|
最大工作溫度
|
+150C
|
|
Pd-功率耗散
|
1.9W
|
|
配置
|
SingleQuadDrain
|
|
封裝
|
CutTape
|
|
封裝
|
MouseReel
|
|
封裝
|
Reel
|
|
產(chǎn)品
|
MOSFETSmallSignal
|
|
系列
|
NTLJS3113P
|
|
商標(biāo)
|
ONSemiconductor
|
|
工廠包裝數(shù)量
|
3000
|
|
子類別
|
MOSFETs
|
|
Channel Mode
|
Enhancement
|
|
Automotive
|
No
|
|
Package Width
|
2
|
|
HTS
|
8541.29.00.95
|
|
Maximum Continuous Drain Curre...
|
5.8
|
|
Military
|
No
|
|
PCB changed
|
6
|
|
Standard Package Name
|
DFN
|
|
Product Category
|
Power MOSFET
|
|
Typical Rise Time (ns)
|
17.5
|
|
Typical Gate Charge @ Vgs (nC)
|
13@4.5V
|
|
Configuration
|
Single Quad Drain
|
|
Typical Turn-Off Delay Time (n...
|
60
|
|
Number of Elements per Chip
|
1
|
|
Channel Type
|
P
|
|
Maximum Operating Temperature ...
|
150
|
|
EU RoHS
|
Compliant
|
|
Mounting
|
Surface Mount
|
|
Typical Input Capacitance @ Vd...
|
1329@16V
|
|
Pin Count
|
6
|
|
Package Height
|
0.75(Max)
|
|
Typical Fall Time (ns)
|
56.5
|
|
Package Length
|
2
|
|
Part Status
|
Active
|
|
Maximum Power Dissipation (mW)
|
3300
|
|
Minimum Operating Temperature ...
|
-55
|
|
Supplier Package
|
WDFN
|
|
Maximum Drain Source Voltage (...
|
20
|
|
Maximum Gate Source Voltage (V...
|
±8
|
|
ECCN (US)
|
EAR99
|
|
Typical Turn-On Delay Time (ns...
|
6.9
|
|
Maximum Drain Source Resistanc...
|
40@4.5V
|
|
Packaging
|
Tape and Reel
|