恒捷供應(yīng)鏈
ZXMHC6A07N8TC
加入對比型號： ZXMHC6A07N8TC
品牌： 美臺
類別： FET/MOSFET 單體
描述： Quad N/P-Channel MOSFET, 1.4 A, 1.8 A, 60 V, 8-Pin SOIC Diodes Inc
品牌官網(wǎng)： www.diodes.com
- 賣盤信息
- 參數(shù)
- 常見問題
| 參數(shù) | 數(shù)值 |
|---|---|
|
Country Of Origins
|
China
|
|
Lifecyle
|
Active
|
|
EU RoHS
|
Yes
|
|
EU RoHS Version
|
2011/65/EU, 2015/863
|
|
Part Number Code
|
View Code
|
|
Description
|
Trans MOSFET N/P-CH 60V 1.8A/1.42A 8-Pin SO T/R
|
|
Taxonomy
|
Diodes, Transistors and Thyristors > FET Transistors > MOSFETs
|
|
Introduction Date
|
2009-05-04 00
|
|
ECCN
|
EAR99
|
|
Supplier Cage Code
|
6M0U4
|
|
HTSUSA
|
8541290095
|
|
ForwardTransconductancegFS(Max...
|
2.3S,1.8S
|
|
ContinuousDrainCurrent
|
1.8A,-1.42A
|
|
ResistanceDrainSourceRDS(on)
|
0.35Ohmsat1.5A,4.5V,0.6Ohmsat-1.2A,-4.5V
|
|
MaximumOperatingTemperature
|
+150C
|
|
MountingStyle
|
SMD/SMT
|
|
RiseTime
|
1.4ns,2.3ns
|
|
ZXMHC6A07N8TCProductDetails
|
ThisnewgenerationcomplementaryMOSFETH-Bridgefeatureslowon-resistanceachievablewithlowgatedrive.
|
|
TypicalTurnOffDelayTime
|
4.9ns,13ns
|
|
MinimumOperatingTemperature
|
-55C
|
|
Package/Case
|
SOIC-8
|
|
Configuration
|
H-Bridge
|
|
DrainSourceBreakdownVoltage
|
60V
|
|
PowerDissipation
|
1.36W
|
|
Packaging
|
Reel
|
|
GateChargeQg
|
3.2nC,5.1nC
|
|
FallTime
|
2ns,5.8ns
|
|
TransistorPolarity
|
NandP-Channel
|
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