恒捷供應(yīng)鏈
EPC2108ENGRT
加入對(duì)比型號(hào)： EPC2108ENGRT
品牌： 宜普
類別： FET/MOSFET 單體
描述： TRANS GAN 3N-CH BUMPED DIE
品牌官網(wǎng)： epc-co.com
- 賣盤信息
- 參數(shù)
- 常見問(wèn)題
| 參數(shù) | 數(shù)值 |
|---|---|
|
lead free status
|
non-pb-free
|
|
Field-effect transistor type
|
3N-CH (Half Bridge)
|
|
Drain to Source voltage
|
60V|100V
|
|
Continuous drain current
|
1.7A|500mA
|
|
Polarity
|
N
|
|
Package
|
9-VFBGA
|
|
Series name
|
eGaN
|
|
Rds On (Max) @ Id, Vgs
|
190 mOhm @ 2.5A, 5V
|
|
FET Feature
|
GaNFET (Gallium Nitride)
|
|
Mounting Type
|
Surface Mount
|
|
Input Capacitance (Ciss) (Max)...
|
22pF @ 30V
|
|
Operating Temperature
|
-40°C ~ 150°C (TJ)
|
|
Manufacturer Part Number
|
EPC2108ENGRT
|
|
Series
|
eGaN?
|
|
Package / Case
|
Die
|
|
Description
|
TRANS GAN 3N-CH BUMPED DIE
|
|
Category
|
Discrete Semiconductor
|
|
Vgs(th) (Max) @ Id
|
2.5V @ 200μA
|
|
Manufacturer
|
EPC
|
|
Power - Max
|
-
|
|
Drain to Source Voltage (Vdss)
|
60V, 100V
|
|
Current - Continuous Drain (Id...
|
1.7A, 500mA
|
|
FET Type
|
3 N-Channel (Half Bridge + Synchronous Bootstrap)
|
|
Supplier Device Package
|
Die
|
|
Packaging
|
Tape & Reel (TR)
|
|
Gate Charge (Qg) (Max) @ Vgs
|
0.22nC @ 5V
|
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