NE3512S02-T1D-A
型號(hào): NE3512S02-T1D-A
類別: 射頻用FET/MOSFET
描述: N-CHANNEL SINGLE 4 LOW NOISE RF Mosfet 0.015A 0.165W 12.5dB 3V
品牌官網(wǎng):
- 賣盤信息
- 常見(jiàn)問(wèn)題
- 參數(shù)
-
平臺(tái)購(gòu)物流程是怎樣的?
平臺(tái)商品來(lái)源有保障嗎?
平臺(tái)上展示的商品數(shù)量、價(jià)格及相關(guān)信息準(zhǔn)確嗎?
平臺(tái)支持BOM詢價(jià)嗎?
平臺(tái)下單后什么時(shí)候能發(fā)貨?多久能到?
拍明芯城的訂單如何跟蹤?
拍明芯城的訂單可以提供合同嗎?
拍明芯城的發(fā)票如何開(kāi)具?
參數(shù) | 數(shù)值 |
---|---|
FactoryLeadTime
|
[objectObject]
|
SurfaceMount
|
YES
|
ECCNCode
|
EAR99
|
QualificationStatus
|
NotQualified
|
Polarity/ChannelType
|
N-CHANNEL
|
DSBreakdownVoltage-Min
|
3V
|
FETTechnology
|
HETERO-JUNCTION
|
PowerDissipation-Max(Abs)
|
0.165W
|
RoHSStatus
|
RoHSCompliant
|
NumberofTerminals
|
4
|
JESD-609Code
|
e6
|
PbfreeCode
|
yes
|
Subcategory
|
OtherTransistors
|
TerminalForm
|
FLAT
|
JESD-30Code
|
R-PQMW-F4
|
NumberofElements
|
1
|
TransistorApplication
|
AMPLIFIER
|
HighestFrequencyBand
|
KUB
|
PowerGain-Min(Gp)
|
12.5dB
|
TerminalPosition
|
QUAD
|
ReachComplianceCode
|
compliant
|
Time@PeakReflowTemperature-Max...
|
NOTSPECIFIED
|
PinCount
|
4
|
TransistorElementMaterial
|
SILICON
|
TerminalFinish
|
Tin/Bismuth(Sn/Bi)
|
AdditionalFeature
|
LOWNOISE
|
PeakReflowTemperature(Cel)
|
NOTSPECIFIED
|
OperatingTemperature(Max)
|
125°C
|
Configuration
|
SINGLE
|
OperatingMode
|
DEPLETIONMODE
|
DrainCurrent-Max(Abs)(ID)
|
0.015A
|