NSBA114YDXV6T1
型號(hào): NSBA114YDXV6T1
類(lèi)別: 帶預(yù)偏置雙極型晶體管陣列
描述: Tape & Reel (TR) Surface Mount PNP SEPARATE 2ELEMENTS WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 80 @ 5mA 10V 100mA 500mW 50V
品牌官網(wǎng): www.rocelec.cn
- 賣(mài)盤(pán)信息
- 常見(jiàn)問(wèn)題
- 參數(shù)
-
平臺(tái)購(gòu)物流程是怎樣的?
平臺(tái)商品來(lái)源有保障嗎?
平臺(tái)上展示的商品數(shù)量、價(jià)格及相關(guān)信息準(zhǔn)確嗎?
平臺(tái)支持BOM詢(xún)價(jià)嗎?
平臺(tái)下單后什么時(shí)候能發(fā)貨?多久能到?
拍明芯城的訂單如何跟蹤?
拍明芯城的訂單可以提供合同嗎?
拍明芯城的發(fā)票如何開(kāi)具?
參數(shù) | 數(shù)值 |
---|---|
PbfreeCode
|
yes
|
NumberofTerminations
|
6
|
PeakReflowTemperature(Cel)
|
260
|
TransistorApplication
|
SWITCHING
|
TransistorType
|
2PNP-Pre-Biased(Dual)
|
MountingType
|
SurfaceMount
|
TransistorElementMaterial
|
SILICON
|
Packaging
|
Tape&Reel(TR)
|
JESD-609Code
|
e3
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
AdditionalFeature
|
BUILTINBIASRESISTORRATIOIS0.21
|
PinCount
|
6
|
Configuration
|
SEPARATE,2ELEMENTSWITHBUILT-INRESISTOR
|
Power-Max
|
500mW
|
DCCurrentGain(hFE)(Min)@Ic,Vce
|
80@5mA10V
|
RoHSStatus
|
ROHS3Compliant
|
PartStatus
|
Obsolete
|
TerminalForm
|
FLAT
|
Time@PeakReflowTemperature-Max...
|
40
|
Current-Collector(Ic)(Max)
|
100mA
|
Resistor-Base(R1)
|
10kΩ
|
Package/Case
|
SOT-563,SOT-666
|
SurfaceMount
|
YES
|
TerminalFinish
|
MATTETIN
|
JESD-30Code
|
R-PDSO-F6
|
QualificationStatus
|
COMMERCIAL
|
NumberofElements
|
2
|
Polarity/ChannelType
|
PNP
|
Current-CollectorCutoff(Max)
|
500nA
|
VceSaturation(Max)@Ib,Ic
|
250mV@300μA,10mA
|
Voltage-CollectorEmitterBreakd...
|
50V
|
Resistor-EmitterBase(R2)
|
47kΩ
|