恒捷供應(yīng)鏈
HGTP3N60A4D
加入對比型號： HGTP3N60A4D
品牌： 羅徹斯特
類別： IGBT單體
描述： Tube Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.7V @ 15V 3A 17A 70W 29ns
品牌官網(wǎng)： www.rocelec.cn
- 賣盤信息
- 參數(shù)
- 常見問題
| 參數(shù) | 數(shù)值 |
|---|---|
|
SurfaceMount
|
NO
|
|
Packaging
|
Tube
|
|
NumberofTerminations
|
3
|
|
AdditionalFeature
|
LOWCONDUCTIONLOSS
|
|
JESD-30Code
|
R-PSFM-T3
|
|
QualificationStatus
|
COMMERCIAL
|
|
CaseConnection
|
COLLECTOR
|
|
ReverseRecoveryTime
|
29ns
|
|
JEDEC-95Code
|
TO-220AB
|
|
TurnOffTime-Nom(toff)
|
180ns
|
|
Td(on/off)@25°C
|
6ns/73ns
|
|
Package/Case
|
TO-220-3
|
|
JESD-609Code
|
e3
|
|
NumberofElements
|
1
|
|
TransistorApplication
|
POWERCONTROL
|
|
Voltage-CollectorEmitterBreakd...
|
600V
|
|
Current-Collector(Ic)(Max)
|
17A
|
|
Vce(on)(Max)@Vge,Ic
|
2.7V@15V,3A
|
|
TransistorElementMaterial
|
SILICON
|
|
PbfreeCode
|
yes
|
|
PeakReflowTemperature(Cel)
|
NOTAPPLICABLE
|
|
ReachComplianceCode
|
unknown
|
|
Time@PeakReflowTemperature-Max...
|
NOTAPPLICABLE
|
|
TestCondition
|
390V,3A,50Ω,15V
|
|
GateCharge
|
21nC
|
|
MountingType
|
ThroughHole
|
|
OperatingTemperature
|
-55°C~150°CTJ
|
|
PartStatus
|
Obsolete
|
|
MoistureSensitivityLevel(MSL)
|
3(168Hours)
|
|
TerminalFinish
|
MATTETIN
|
|
TerminalPosition
|
SINGLE
|
|
Configuration
|
SINGLEWITHBUILT-INDIODE
|
|
InputType
|
Standard
|
|
Power-Max
|
70W
|
|
Polarity/ChannelType
|
N-CHANNEL
|
|
TurnOnTime
|
17.5ns
|
|
Current-CollectorPulsed(Icm)
|
40A
|
|
SwitchingEnergy
|
37μJ(on),25μJ(off)
|
|
RoHSStatus
|
ROHS3Compliant
|
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