HUFA75637P3
型號(hào): HUFA75637P3
類別: FET/MOSFET 單體
描述: UltraFET? Tube Through Hole N-Channel Mosfet Transistor 44A Tc 44A 155W Tc 100V
品牌官網(wǎng): www.rocelec.cn
- 賣盤信息
- 常見問題
- 參數(shù)
-
平臺(tái)購(gòu)物流程是怎樣的?
平臺(tái)商品來源有保障嗎?
平臺(tái)上展示的商品數(shù)量、價(jià)格及相關(guān)信息準(zhǔn)確嗎?
平臺(tái)支持BOM詢價(jià)嗎?
平臺(tái)下單后什么時(shí)候能發(fā)貨?多久能到?
拍明芯城的訂單如何跟蹤?
拍明芯城的訂單可以提供合同嗎?
拍明芯城的發(fā)票如何開具?
參數(shù) | 數(shù)值 |
---|---|
Package/Case
|
TO-220-3
|
SurfaceMount
|
NO
|
TransistorElementMaterial
|
SILICON
|
OperatingTemperature
|
-55°C~175°CTJ
|
Packaging
|
Tube
|
Series
|
UltraFET?
|
JESD-609Code
|
e3
|
PbfreeCode
|
yes
|
PartStatus
|
Obsolete
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
NumberofTerminations
|
3
|
TerminalFinish
|
MATTETIN
|
Technology
|
MOSFET(MetalOxide)
|
TerminalPosition
|
SINGLE
|
PeakReflowTemperature(Cel)
|
NOTAPPLICABLE
|
ReachComplianceCode
|
unknown
|
Time@PeakReflowTemperature-Max...
|
NOTAPPLICABLE
|
JESD-30Code
|
R-PSFM-T3
|
QualificationStatus
|
COMMERCIAL
|
NumberofElements
|
1
|
Configuration
|
SINGLEWITHBUILT-INDIODE
|
PowerDissipation-Max
|
155WTc
|
OperatingMode
|
ENHANCEMENTMODE
|
CaseConnection
|
DRAIN
|
TransistorApplication
|
SWITCHING
|
RdsOn(Max)@Id,Vgs
|
30mΩ@44A,10V
|
Vgs(th)(Max)@Id
|
4V@250μA
|
InputCapacitance(Ciss)(Max)@Vd...
|
1.7pF@25V
|
Current-ContinuousDrain(Id)@25...
|
44ATc
|
GateCharge(Qg)(Max)@Vgs
|
108nC@20V
|
DraintoSourceVoltage(Vdss)
|
100V
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
Vgs(Max)
|
±20V
|
JEDEC-95Code
|
TO-220AB
|
DrainCurrent-Max(Abs)(ID)
|
44A
|
Drain-sourceOnResistance-Max
|
0.03Ohm
|
DSBreakdownVoltage-Min
|
100V
|
RoHSStatus
|
ROHS3Compliant
|