NTP18N06L
型號(hào): NTP18N06L
類別: FET/MOSFET 單體
描述: Tube Through Hole N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 15A Tc 15A 48.4W Tc 60V
品牌官網(wǎng): www.rocelec.cn
- 賣盤信息
- 常見問(wèn)題
- 參數(shù)
-
平臺(tái)購(gòu)物流程是怎樣的?
平臺(tái)商品來(lái)源有保障嗎?
平臺(tái)上展示的商品數(shù)量、價(jià)格及相關(guān)信息準(zhǔn)確嗎?
平臺(tái)支持BOM詢價(jià)嗎?
平臺(tái)下單后什么時(shí)候能發(fā)貨?多久能到?
拍明芯城的訂單如何跟蹤?
拍明芯城的訂單可以提供合同嗎?
拍明芯城的發(fā)票如何開具?
參數(shù) | 數(shù)值 |
---|---|
Package/Case
|
TO-220-3
|
SurfaceMount
|
NO
|
TransistorElementMaterial
|
SILICON
|
OperatingTemperature
|
-55°C~175°CTJ
|
Packaging
|
Tube
|
JESD-609Code
|
e3
|
PbfreeCode
|
yes
|
PartStatus
|
Obsolete
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
NumberofTerminations
|
3
|
TerminalFinish
|
MATTETIN
|
AdditionalFeature
|
LOGICLEVELCOMPATIBLE
|
Technology
|
MOSFET(MetalOxide)
|
TerminalPosition
|
SINGLE
|
PeakReflowTemperature(Cel)
|
260
|
Time@PeakReflowTemperature-Max...
|
40
|
PinCount
|
3
|
JESD-30Code
|
R-PSFM-T3
|
QualificationStatus
|
COMMERCIAL
|
NumberofElements
|
1
|
Configuration
|
SINGLEWITHBUILT-INDIODE
|
PowerDissipation-Max
|
48.4WTc
|
OperatingMode
|
ENHANCEMENTMODE
|
CaseConnection
|
DRAIN
|
TransistorApplication
|
SWITCHING
|
RdsOn(Max)@Id,Vgs
|
100mΩ@7.5A,5V
|
Vgs(th)(Max)@Id
|
2V@250μA
|
InputCapacitance(Ciss)(Max)@Vd...
|
440pF@25V
|
Current-ContinuousDrain(Id)@25...
|
15ATc
|
GateCharge(Qg)(Max)@Vgs
|
20nC@5V
|
DraintoSourceVoltage(Vdss)
|
60V
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
5V
|
Vgs(Max)
|
±10V
|
JEDEC-95Code
|
TO-220AB
|
DrainCurrent-Max(Abs)(ID)
|
15A
|
Drain-sourceOnResistance-Max
|
0.1Ohm
|
PulsedDrainCurrent-Max(IDM)
|
45A
|
DSBreakdownVoltage-Min
|
60V
|
AvalancheEnergyRating(Eas)
|
61mJ
|
RoHSStatus
|
Non-RoHSCompliant
|