IXTA8N50P
型號(hào): IXTA8N50P
類別: FET/MOSFET 單體
描述: Transistor: N-MOSFET; unipolar; 500V; 8A; 150W; TO263; 400ns
品牌官網(wǎng):
- 賣盤信息
- 常見問題
- 參數(shù)
-
平臺(tái)購物流程是怎樣的?
平臺(tái)商品來源有保障嗎?
平臺(tái)上展示的商品數(shù)量、價(jià)格及相關(guān)信息準(zhǔn)確嗎?
平臺(tái)支持BOM詢價(jià)嗎?
平臺(tái)下單后什么時(shí)候能發(fā)貨?多久能到?
拍明芯城的訂單如何跟蹤?
拍明芯城的訂單可以提供合同嗎?
拍明芯城的發(fā)票如何開具?
參數(shù) | 數(shù)值 |
---|---|
FactoryLeadTime
|
4Weeks
|
Mount
|
SurfaceMount
|
Package/Case
|
TO-263-3,D2Pak(2Leads+Tab),TO-263AB
|
NumberofPins
|
3
|
TransistorElementMaterial
|
SILICON
|
OperatingTemperature
|
-55°C~150°CTJ
|
Packaging
|
Tube
|
Published
|
2006
|
Series
|
PolarHV?
|
JESD-609Code
|
e3
|
PbfreeCode
|
yes
|
PartStatus
|
Obsolete
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
NumberofTerminations
|
2
|
TerminalFinish
|
MatteTin(Sn)
|
AdditionalFeature
|
AVALANCHERATED
|
Voltage-RatedDC
|
500V
|
Technology
|
MOSFET(MetalOxide)
|
TerminalForm
|
GULLWING
|
CurrentRating
|
8A
|
PinCount
|
4
|
JESD-30Code
|
R-PSSO-G2
|
NumberofElements
|
1
|
PowerDissipation-Max
|
150WTc
|
ElementConfiguration
|
Single
|
OperatingMode
|
ENHANCEMENTMODE
|
PowerDissipation
|
150W
|
CaseConnection
|
DRAIN
|
TransistorApplication
|
SWITCHING
|
RdsOn(Max)@Id,Vgs
|
800mΩ@4A,10V
|
Vgs(th)(Max)@Id
|
5.5V@100μA
|
InputCapacitance(Ciss)(Max)@Vd...
|
1050pF@25V
|
Current-ContinuousDrain(Id)@25...
|
8ATc
|
GateCharge(Qg)(Max)@Vgs
|
20nC@10V
|
RiseTime
|
28ns
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
Vgs(Max)
|
±30V
|
FallTime(Typ)
|
23ns
|
Turn-OffDelayTime
|
65ns
|
ContinuousDrainCurrent(ID)
|
8A
|
GatetoSourceVoltage(Vgs)
|
30V
|
DrainCurrent-Max(Abs)(ID)
|
8A
|
Drain-sourceOnResistance-Max
|
0.8Ohm
|
DraintoSourceBreakdownVoltage
|
500V
|
AvalancheEnergyRating(Eas)
|
400mJ
|
RadiationHardening
|
No
|
RoHSStatus
|
RoHSCompliant
|
LeadFree
|
LeadFree
|