IXFN60N80P
型號(hào): IXFN60N80P
類別: FET/MOSFET 單體
描述: IXFN60N80P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from IXYS stock available at HK JDW
品牌官網(wǎng):
- 賣盤信息
- 常見問題
- 參數(shù)
-
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參數(shù) | 數(shù)值 |
---|---|
FactoryLeadTime
|
30Weeks
|
Mount
|
ChassisMount,Panel,Screw
|
Package/Case
|
SOT-227-4,miniBLOC
|
NumberofPins
|
4
|
TransistorElementMaterial
|
SILICON
|
OperatingTemperature
|
-55°C~150°CTJ
|
Packaging
|
Tube
|
Published
|
2003
|
Series
|
PolarHV?
|
PbfreeCode
|
yes
|
PartStatus
|
Active
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
NumberofTerminations
|
4
|
ECCNCode
|
EAR99
|
TerminalFinish
|
Nickel(Ni)
|
AdditionalFeature
|
AVALANCHERATED
|
Technology
|
MOSFET(MetalOxide)
|
TerminalPosition
|
UPPER
|
TerminalForm
|
UNSPECIFIED
|
PinCount
|
4
|
NumberofElements
|
1
|
PowerDissipation-Max
|
1040WTc
|
ElementConfiguration
|
Single
|
OperatingMode
|
ENHANCEMENTMODE
|
PowerDissipation
|
1.04kW
|
CaseConnection
|
ISOLATED
|
TurnOnDelayTime
|
36ns
|
TransistorApplication
|
SWITCHING
|
RdsOn(Max)@Id,Vgs
|
140mΩ@30A,10V
|
Vgs(th)(Max)@Id
|
5V@8mA
|
InputCapacitance(Ciss)(Max)@Vd...
|
18000pF@25V
|
Current-ContinuousDrain(Id)@25...
|
53ATc
|
GateCharge(Qg)(Max)@Vgs
|
250nC@10V
|
RiseTime
|
29ns
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
Vgs(Max)
|
±30V
|
FallTime(Typ)
|
26ns
|
Turn-OffDelayTime
|
110ns
|
ContinuousDrainCurrent(ID)
|
53A
|
ThresholdVoltage
|
5V
|
GatetoSourceVoltage(Vgs)
|
30V
|
DraintoSourceBreakdownVoltage
|
800V
|
PulsedDrainCurrent-Max(IDM)
|
250A
|
AvalancheEnergyRating(Eas)
|
5000mJ
|
Height
|
9.6mm
|
Length
|
38.23mm
|
Width
|
25.42mm
|
RadiationHardening
|
No
|
REACHSVHC
|
NoSVHC
|
RoHSStatus
|
ROHS3Compliant
|
LeadFree
|
LeadFree
|