恒捷供應鏈
IXFN132N50P3
加入對比型號： IXFN132N50P3
品牌： IXYS / LITTELFUSE
類別： FET/MOSFET 單體
描述： In a Tube of 10, IXFN132N50P3 N-Channel MOSFET, 112 A, 500 V HiperFET, Polar3, 4-Pin SOT-227B IXYS
品牌官網(wǎng)：
- 賣盤信息
- 參數(shù)
- 常見問題
| 參數(shù) | 數(shù)值 |
|---|---|
|
FactoryLeadTime
|
20Weeks
|
|
Mount
|
ChassisMount,Panel
|
|
Package/Case
|
SOT-227-4,miniBLOC
|
|
NumberofPins
|
4
|
|
TransistorElementMaterial
|
SILICON
|
|
OperatingTemperature
|
-55°C~150°CTJ
|
|
Packaging
|
Tube
|
|
Published
|
2011
|
|
Series
|
HiPerFET?,Polar3?
|
|
PartStatus
|
Active
|
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
|
NumberofTerminations
|
4
|
|
ECCNCode
|
EAR99
|
|
Resistance
|
39mOhm
|
|
AdditionalFeature
|
AVALANCHERATED,ULRECOGNIZED
|
|
Subcategory
|
FETGeneralPurposePower
|
|
Technology
|
MOSFET(MetalOxide)
|
|
TerminalPosition
|
UPPER
|
|
TerminalForm
|
UNSPECIFIED
|
|
ReachComplianceCode
|
unknown
|
|
PinCount
|
4
|
|
QualificationStatus
|
NotQualified
|
|
NumberofElements
|
1
|
|
PowerDissipation-Max
|
1500WTc
|
|
ElementConfiguration
|
Single
|
|
OperatingMode
|
ENHANCEMENTMODE
|
|
PowerDissipation
|
1.5kW
|
|
CaseConnection
|
ISOLATED
|
|
TurnOnDelayTime
|
44ns
|
|
TransistorApplication
|
SWITCHING
|
|
RdsOn(Max)@Id,Vgs
|
39mΩ@66A,10V
|
|
Vgs(th)(Max)@Id
|
5V@8mA
|
|
InputCapacitance(Ciss)(Max)@Vd...
|
18600pF@25V
|
|
Current-ContinuousDrain(Id)@25...
|
112ATc
|
|
GateCharge(Qg)(Max)@Vgs
|
250nC@10V
|
|
RiseTime
|
9ns
|
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
|
Vgs(Max)
|
±30V
|
|
FallTime(Typ)
|
8ns
|
|
Turn-OffDelayTime
|
72ns
|
|
ContinuousDrainCurrent(ID)
|
112A
|
|
GatetoSourceVoltage(Vgs)
|
30V
|
|
DraintoSourceBreakdownVoltage
|
500V
|
|
PulsedDrainCurrent-Max(IDM)
|
330A
|
|
AvalancheEnergyRating(Eas)
|
3000mJ
|
|
Height
|
9.6mm
|
|
Length
|
38.23mm
|
|
Width
|
25.07mm
|
|
RoHSStatus
|
ROHS3Compliant
|
|
LeadFree
|
LeadFree
|
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