恒捷供應(yīng)鏈
IXTQ22N50P
加入對(duì)比型號(hào)： IXTQ22N50P
品牌： IXYS / LITTELFUSE
類別： FET/MOSFET 單體
描述： MOSFET N-CH 500V 22A TO-3P
品牌官網(wǎng)：
- 賣盤信息
- 參數(shù)
- 常見問題
| 參數(shù) | 數(shù)值 |
|---|---|
|
FactoryLeadTime
|
5Weeks
|
|
Mount
|
ThroughHole
|
|
Package/Case
|
TO-3P-3,SC-65-3
|
|
NumberofPins
|
3
|
|
TransistorElementMaterial
|
SILICON
|
|
OperatingTemperature
|
-55°C~150°CTJ
|
|
Packaging
|
Tube
|
|
Published
|
2006
|
|
Series
|
PolarHV?
|
|
JESD-609Code
|
e3
|
|
PbfreeCode
|
yes
|
|
PartStatus
|
Active
|
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
|
NumberofTerminations
|
3
|
|
TerminalFinish
|
MatteTin(Sn)
|
|
AdditionalFeature
|
AVALANCHERATED
|
|
Subcategory
|
FETGeneralPurposePower
|
|
Voltage-RatedDC
|
500V
|
|
Technology
|
MOSFET(MetalOxide)
|
|
PeakReflowTemperature(Cel)
|
NOTSPECIFIED
|
|
CurrentRating
|
22A
|
|
Time@PeakReflowTemperature-Max...
|
NOTSPECIFIED
|
|
PinCount
|
3
|
|
QualificationStatus
|
NotQualified
|
|
NumberofElements
|
1
|
|
PowerDissipation-Max
|
350WTc
|
|
ElementConfiguration
|
Single
|
|
OperatingMode
|
ENHANCEMENTMODE
|
|
PowerDissipation
|
350W
|
|
CaseConnection
|
DRAIN
|
|
TransistorApplication
|
SWITCHING
|
|
RdsOn(Max)@Id,Vgs
|
270mΩ@11A,10V
|
|
Vgs(th)(Max)@Id
|
5.5V@250μA
|
|
InputCapacitance(Ciss)(Max)@Vd...
|
2630pF@25V
|
|
Current-ContinuousDrain(Id)@25...
|
22ATc
|
|
GateCharge(Qg)(Max)@Vgs
|
50nC@10V
|
|
RiseTime
|
27ns
|
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
|
Vgs(Max)
|
±30V
|
|
FallTime(Typ)
|
21ns
|
|
Turn-OffDelayTime
|
75ns
|
|
ContinuousDrainCurrent(ID)
|
22A
|
|
GatetoSourceVoltage(Vgs)
|
30V
|
|
Drain-sourceOnResistance-Max
|
0.27Ohm
|
|
DraintoSourceBreakdownVoltage
|
500V
|
|
PulsedDrainCurrent-Max(IDM)
|
50A
|
|
AvalancheEnergyRating(Eas)
|
750mJ
|
|
RoHSStatus
|
ROHS3Compliant
|
|
LeadFree
|
LeadFree
|
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