IXTP1R4N120P
型號(hào): IXTP1R4N120P
品牌: IXYS / LITTELFUSE
類別: FET/MOSFET 單體
描述: MOSFET N-CH 1200V 1.4A TO-220
品牌官網(wǎng):
- 賣盤信息
- 參數(shù)
- 常見問題
參數(shù) | 數(shù)值 |
---|---|
NumberofElements
|
1
|
PowerDissipation-Max
|
86WTc
|
ElementConfiguration
|
Single
|
OperatingMode
|
ENHANCEMENTMODE
|
PowerDissipation
|
86W
|
CaseConnection
|
DRAIN
|
TransistorApplication
|
SWITCHING
|
RdsOn(Max)@Id,Vgs
|
13Ω@500mA,10V
|
Vgs(th)(Max)@Id
|
4.5V@100μA
|
InputCapacitance(Ciss)(Max)@Vd...
|
666pF@25V
|
Current-ContinuousDrain(Id)@25...
|
1.4ATc
|
GateCharge(Qg)(Max)@Vgs
|
24.8nC@10V
|
RiseTime
|
27ns
|
DraintoSourceVoltage(Vdss)
|
1200V
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
Vgs(Max)
|
±20V
|
FallTime(Typ)
|
29ns
|
Turn-OffDelayTime
|
78ns
|
ContinuousDrainCurrent(ID)
|
1.4A
|
JEDEC-95Code
|
TO-220AB
|
GatetoSourceVoltage(Vgs)
|
20V
|
DraintoSourceBreakdownVoltage
|
1.2kV
|
PulsedDrainCurrent-Max(IDM)
|
3A
|
RadiationHardening
|
No
|
RoHSStatus
|
ROHS3Compliant
|
LeadFree
|
LeadFree
|
FactoryLeadTime
|
24Weeks
|
Mount
|
ThroughHole
|
Package/Case
|
TO-220-3
|
TransistorElementMaterial
|
SILICON
|
OperatingTemperature
|
-55°C~150°CTJ
|
Packaging
|
Tube
|
Published
|
2012
|
Series
|
Polar?
|
JESD-609Code
|
e3
|
PbfreeCode
|
yes
|
PartStatus
|
Active
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
NumberofTerminations
|
3
|
TerminalFinish
|
MatteTin(Sn)
|
AdditionalFeature
|
AVALANCHERATED
|
Subcategory
|
FETGeneralPurposePower
|
Technology
|
MOSFET(MetalOxide)
|
PinCount
|
3
|
JESD-30Code
|
R-PSFM-T3
|
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