IXFH110N10P
型號: IXFH110N10P
類別: FET/MOSFET 單體
描述: IXYS SEMICONDUCTOR - IXFH110N10P - MOSFET, N-KANAL, TO-247
品牌官網(wǎng):
- 賣盤信息
- 常見問題
- 參數(shù)
-
平臺購物流程是怎樣的?
平臺商品來源有保障嗎?
平臺上展示的商品數(shù)量、價格及相關(guān)信息準(zhǔn)確嗎?
平臺支持BOM詢價嗎?
平臺下單后什么時候能發(fā)貨?多久能到?
拍明芯城的訂單如何跟蹤?
拍明芯城的訂單可以提供合同嗎?
拍明芯城的發(fā)票如何開具?
參數(shù) | 數(shù)值 |
---|---|
FactoryLeadTime
|
30Weeks
|
Mount
|
ThroughHole
|
Package/Case
|
TO-247-3
|
NumberofPins
|
3
|
TransistorElementMaterial
|
SILICON
|
OperatingTemperature
|
-55°C~175°CTJ
|
Packaging
|
Tube
|
Published
|
2006
|
Series
|
PolarHT?HiPerFET?
|
JESD-609Code
|
e1
|
PbfreeCode
|
yes
|
PartStatus
|
Active
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
NumberofTerminations
|
3
|
ECCNCode
|
EAR99
|
TerminalFinish
|
Tin/Silver/Copper(Sn/Ag/Cu)
|
AdditionalFeature
|
AVALANCHERATED
|
Technology
|
MOSFET(MetalOxide)
|
PinCount
|
3
|
NumberofElements
|
1
|
PowerDissipation-Max
|
480WTc
|
ElementConfiguration
|
Single
|
OperatingMode
|
ENHANCEMENTMODE
|
PowerDissipation
|
480W
|
CaseConnection
|
DRAIN
|
TurnOnDelayTime
|
21ns
|
TransistorApplication
|
SWITCHING
|
RdsOn(Max)@Id,Vgs
|
15mΩ@500mA,10V
|
Vgs(th)(Max)@Id
|
5V@4mA
|
InputCapacitance(Ciss)(Max)@Vd...
|
3550pF@25V
|
Current-ContinuousDrain(Id)@25...
|
110ATc
|
GateCharge(Qg)(Max)@Vgs
|
110nC@10V
|
RiseTime
|
25ns
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
Vgs(Max)
|
±20V
|
FallTime(Typ)
|
25ns
|
Turn-OffDelayTime
|
65ns
|
ContinuousDrainCurrent(ID)
|
110A
|
ThresholdVoltage
|
5V
|
JEDEC-95Code
|
TO-247AD
|
GatetoSourceVoltage(Vgs)
|
20V
|
DraintoSourceBreakdownVoltage
|
100V
|
PulsedDrainCurrent-Max(IDM)
|
250A
|
Height
|
21.46mm
|
Length
|
16.26mm
|
Width
|
5.3mm
|
RadiationHardening
|
No
|
REACHSVHC
|
NoSVHC
|
RoHSStatus
|
ROHS3Compliant
|