IXTT140N10P
型號(hào): IXTT140N10P
類別: FET/MOSFET 單體
描述: Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) TO-268
品牌官網(wǎng):
- 賣盤信息
- 常見問題
- 參數(shù)
-
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參數(shù) | 數(shù)值 |
---|---|
Mount
|
SurfaceMount
|
Package/Case
|
TO-268-3,D3Pak(2Leads+Tab),TO-268AA
|
TransistorElementMaterial
|
SILICON
|
OperatingTemperature
|
-55°C~175°CTJ
|
Packaging
|
Tube
|
Published
|
2006
|
Series
|
PolarHT?
|
JESD-609Code
|
e3
|
PbfreeCode
|
yes
|
PartStatus
|
Active
|
MoistureSensitivityLevel(MSL)
|
3(168Hours)
|
NumberofTerminations
|
2
|
Resistance
|
11MOhm
|
TerminalFinish
|
MatteTin(Sn)
|
AdditionalFeature
|
AVALANCHERATED
|
Subcategory
|
FETGeneralPurposePowers
|
Technology
|
MOSFET(MetalOxide)
|
TerminalForm
|
GULLWING
|
PinCount
|
4
|
JESD-30Code
|
R-PSSO-G2
|
NumberofElements
|
1
|
PowerDissipation-Max
|
600WTc
|
ElementConfiguration
|
Single
|
OperatingMode
|
ENHANCEMENTMODE
|
PowerDissipation
|
600W
|
CaseConnection
|
DRAIN
|
TransistorApplication
|
SWITCHING
|
RdsOn(Max)@Id,Vgs
|
11mΩ@70A,10V
|
Vgs(th)(Max)@Id
|
5V@250μA
|
InputCapacitance(Ciss)(Max)@Vd...
|
4700pF@25V
|
Current-ContinuousDrain(Id)@25...
|
140ATc
|
GateCharge(Qg)(Max)@Vgs
|
155nC@10V
|
RiseTime
|
50ns
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V15V
|
Vgs(Max)
|
±20V
|
FallTime(Typ)
|
26ns
|
Turn-OffDelayTime
|
85ns
|
ContinuousDrainCurrent(ID)
|
140A
|
GatetoSourceVoltage(Vgs)
|
20V
|
DraintoSourceBreakdownVoltage
|
100V
|
PulsedDrainCurrent-Max(IDM)
|
300A
|
AvalancheEnergyRating(Eas)
|
2500mJ
|
RadiationHardening
|
No
|
RoHSStatus
|
ROHS3Compliant
|
LeadFree
|
LeadFree
|
FactoryLeadTime
|
24Weeks
|