IXFK420N10T
型號: IXFK420N10T
類別: FET/MOSFET 單體
描述: N-Channel 100 V 420 A 2.6 mO GigaMOS HiPerFET Power Mosfet - TO-264AA
品牌官網(wǎng):
- 賣盤信息
- 常見問題
- 參數(shù)
-
平臺購物流程是怎樣的?
平臺商品來源有保障嗎?
平臺上展示的商品數(shù)量、價格及相關(guān)信息準確嗎?
平臺支持BOM詢價嗎?
平臺下單后什么時候能發(fā)貨?多久能到?
拍明芯城的訂單如何跟蹤?
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參數(shù) | 數(shù)值 |
---|---|
FactoryLeadTime
|
20Weeks
|
Mount
|
ThroughHole
|
Package/Case
|
TO-264-3,TO-264AA
|
TransistorElementMaterial
|
SILICON
|
OperatingTemperature
|
-55°C~175°CTJ
|
Packaging
|
Tube
|
Published
|
2009
|
Series
|
GigaMOS?HiPerFET?
|
JESD-609Code
|
e1
|
PbfreeCode
|
yes
|
PartStatus
|
Active
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
NumberofTerminations
|
3
|
ECCNCode
|
EAR99
|
TerminalFinish
|
TINSILVERCOPPER
|
AdditionalFeature
|
AVALANCHERATED
|
Subcategory
|
FETGeneralPurposePower
|
Technology
|
MOSFET(MetalOxide)
|
TerminalPosition
|
SINGLE
|
PeakReflowTemperature(Cel)
|
NOTSPECIFIED
|
ReachComplianceCode
|
unknown
|
Time@PeakReflowTemperature-Max...
|
NOTSPECIFIED
|
PinCount
|
3
|
JESD-30Code
|
R-PSFM-T3
|
QualificationStatus
|
NotQualified
|
NumberofElements
|
1
|
Configuration
|
SINGLEWITHBUILT-INDIODE
|
PowerDissipation-Max
|
1670WTc
|
OperatingMode
|
ENHANCEMENTMODE
|
CaseConnection
|
DRAIN
|
TransistorApplication
|
SWITCHING
|
RdsOn(Max)@Id,Vgs
|
2.6mΩ@60A,10V
|
Vgs(th)(Max)@Id
|
5V@8mA
|
InputCapacitance(Ciss)(Max)@Vd...
|
47000pF@25V
|
Current-ContinuousDrain(Id)@25...
|
420ATc
|
GateCharge(Qg)(Max)@Vgs
|
670nC@10V
|
DraintoSourceVoltage(Vdss)
|
100V
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
Vgs(Max)
|
±20V
|
ContinuousDrainCurrent(ID)
|
420A
|
Drain-sourceOnResistance-Max
|
0.0026Ohm
|
PulsedDrainCurrent-Max(IDM)
|
1000A
|
DSBreakdownVoltage-Min
|
100V
|
AvalancheEnergyRating(Eas)
|
5000mJ
|
RoHSStatus
|
ROHS3Compliant
|
LeadFree
|
LeadFree
|