恒捷供應(yīng)鏈
IXFK26N120P
加入對比型號： IXFK26N120P
品牌： IXYS / LITTELFUSE
類別： FET/MOSFET 單體
描述： MOSFET N-CH 1200V 26A TO-264
品牌官網(wǎng)：
- 賣盤信息
- 參數(shù)
- 常見問題
| 參數(shù) | 數(shù)值 |
|---|---|
|
FactoryLeadTime
|
30Weeks
|
|
Mount
|
ThroughHole
|
|
Package/Case
|
TO-264-3,TO-264AA
|
|
NumberofPins
|
3
|
|
TransistorElementMaterial
|
SILICON
|
|
OperatingTemperature
|
-55°C~150°CTJ
|
|
Packaging
|
Tube
|
|
Published
|
2007
|
|
Series
|
HiPerFET?,PolarP2?
|
|
JESD-609Code
|
e1
|
|
PbfreeCode
|
yes
|
|
PartStatus
|
Active
|
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
|
NumberofTerminations
|
3
|
|
ECCNCode
|
EAR99
|
|
TerminalFinish
|
Tin/Silver/Copper(Sn/Ag/Cu)
|
|
AdditionalFeature
|
AVALANCHERATED
|
|
Subcategory
|
FETGeneralPurposePower
|
|
Technology
|
MOSFET(MetalOxide)
|
|
PinCount
|
3
|
|
NumberofElements
|
1
|
|
PowerDissipation-Max
|
960WTc
|
|
ElementConfiguration
|
Single
|
|
OperatingMode
|
ENHANCEMENTMODE
|
|
PowerDissipation
|
960W
|
|
CaseConnection
|
DRAIN
|
|
TurnOnDelayTime
|
56ns
|
|
TransistorApplication
|
SWITCHING
|
|
RdsOn(Max)@Id,Vgs
|
460mΩ@13A,10V
|
|
Vgs(th)(Max)@Id
|
6.5V@1mA
|
|
InputCapacitance(Ciss)(Max)@Vd...
|
16000pF@25V
|
|
Current-ContinuousDrain(Id)@25...
|
26ATc
|
|
GateCharge(Qg)(Max)@Vgs
|
225nC@10V
|
|
RiseTime
|
55ns
|
|
DraintoSourceVoltage(Vdss)
|
1200V
|
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
|
Vgs(Max)
|
±30V
|
|
FallTime(Typ)
|
58ns
|
|
Turn-OffDelayTime
|
76ns
|
|
ContinuousDrainCurrent(ID)
|
26A
|
|
GatetoSourceVoltage(Vgs)
|
30V
|
|
Drain-sourceOnResistance-Max
|
0.46Ohm
|
|
DraintoSourceBreakdownVoltage
|
1.2kV
|
|
PulsedDrainCurrent-Max(IDM)
|
60A
|
|
Height
|
26.16mm
|
|
Length
|
19.96mm
|
|
Width
|
5.13mm
|
|
RadiationHardening
|
No
|
|
RoHSStatus
|
ROHS3Compliant
|
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