IXFH6N100F
型號(hào): IXFH6N100F
類別: FET/MOSFET 單體
描述: IXYS RF IXFH6N100F RF FET Transistor, 1 kV, 6 A, 180 W, 500 kHz, TO-247AD
品牌官網(wǎng):
- 賣盤信息
- 常見問(wèn)題
- 參數(shù)
-
平臺(tái)購(gòu)物流程是怎樣的?
平臺(tái)商品來(lái)源有保障嗎?
平臺(tái)上展示的商品數(shù)量、價(jià)格及相關(guān)信息準(zhǔn)確嗎?
平臺(tái)支持BOM詢價(jià)嗎?
平臺(tái)下單后什么時(shí)候能發(fā)貨?多久能到?
拍明芯城的訂單如何跟蹤?
拍明芯城的訂單可以提供合同嗎?
拍明芯城的發(fā)票如何開具?
參數(shù) | 數(shù)值 |
---|---|
TransistorApplication
|
SWITCHING
|
Packaging
|
Tube
|
RdsOn(Max)@Id,Vgs
|
1.9Ω@3A,10V
|
Published
|
2003
|
Vgs(th)(Max)@Id
|
5.5V@2.5mA
|
Series
|
HiPerRF?
|
InputCapacitance(Ciss)(Max)@Vd...
|
1770pF@25V
|
Current-ContinuousDrain(Id)@25...
|
6ATc
|
JESD-609Code
|
e1
|
GateCharge(Qg)(Max)@Vgs
|
54nC@10V
|
RiseTime
|
8.6ns
|
PbfreeCode
|
yes
|
DraintoSourceVoltage(Vdss)
|
1000V
|
PartStatus
|
Active
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
Vgs(Max)
|
±20V
|
FallTime(Typ)
|
8.3ns
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
Turn-OffDelayTime
|
31ns
|
NumberofTerminations
|
3
|
ContinuousDrainCurrent(ID)
|
6A
|
GatetoSourceVoltage(Vgs)
|
20V
|
DrainCurrent-Max(Abs)(ID)
|
6A
|
DraintoSourceBreakdownVoltage
|
1kV
|
ECCNCode
|
EAR99
|
PulsedDrainCurrent-Max(IDM)
|
24A
|
AvalancheEnergyRating(Eas)
|
700mJ
|
REACHSVHC
|
NoSVHC
|
RoHSStatus
|
ROHS3Compliant
|
Resistance
|
1.9Ohm
|
TerminalFinish
|
Tin/Silver/Copper(Sn/Ag/Cu)
|
AdditionalFeature
|
AVALANCHERATED
|
Technology
|
MOSFET(MetalOxide)
|
PeakReflowTemperature(Cel)
|
NOTSPECIFIED
|
Time@PeakReflowTemperature-Max...
|
NOTSPECIFIED
|
PinCount
|
3
|
QualificationStatus
|
NotQualified
|
FactoryLeadTime
|
30Weeks
|
NumberofElements
|
1
|
PowerDissipation-Max
|
180WTc
|
Package/Case
|
TO-247-3
|
ElementConfiguration
|
Single
|
SurfaceMount
|
NO
|
OperatingMode
|
ENHANCEMENTMODE
|
PowerDissipation
|
180W
|
NumberofPins
|
3
|
TransistorElementMaterial
|
SILICON
|
CaseConnection
|
DRAIN
|
OperatingTemperature
|
-55°C~150°CTJ
|