IXFX360N15T2
型號(hào): IXFX360N15T2
類別: FET/MOSFET 單體
描述: Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
品牌官網(wǎng):
- 賣盤信息
- 常見問題
- 參數(shù)
-
平臺(tái)購物流程是怎樣的?
平臺(tái)商品來源有保障嗎?
平臺(tái)上展示的商品數(shù)量、價(jià)格及相關(guān)信息準(zhǔn)確嗎?
平臺(tái)支持BOM詢價(jià)嗎?
平臺(tái)下單后什么時(shí)候能發(fā)貨?多久能到?
拍明芯城的訂單如何跟蹤?
拍明芯城的訂單可以提供合同嗎?
拍明芯城的發(fā)票如何開具?
參數(shù) | 數(shù)值 |
---|---|
ContinuousDrainCurrent(ID)
|
360A
|
QualificationStatus
|
NotQualified
|
Drain-sourceOnResistance-Max
|
0.004Ohm
|
OutputVoltage
|
150V
|
PulsedDrainCurrent-Max(IDM)
|
900A
|
NumberofElements
|
1
|
NumberofDrivers
|
1
|
Configuration
|
SINGLEWITHBUILT-INDIODE
|
RoHSStatus
|
ROHS3Compliant
|
FactoryLeadTime
|
30Weeks
|
LeadFree
|
LeadFree
|
Mount
|
ThroughHole
|
PowerDissipation-Max
|
1670WTc
|
Package/Case
|
TO-247-3
|
NominalSupplyCurrent
|
100A
|
NumberofPins
|
247
|
TransistorElementMaterial
|
SILICON
|
OperatingTemperature
|
-55°C~175°CTJ
|
OperatingMode
|
ENHANCEMENTMODE
|
Packaging
|
Tube
|
Published
|
2009
|
OutputCurrent
|
360A
|
Series
|
GigaMOS?
|
JESD-609Code
|
e1
|
CaseConnection
|
DRAIN
|
PbfreeCode
|
yes
|
PartStatus
|
Active
|
TurnOnDelayTime
|
50ns
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
NumberofTerminations
|
3
|
ECCNCode
|
EAR99
|
TerminalFinish
|
TINSILVERCOPPER
|
AdditionalFeature
|
AVALANCHERATED
|
TransistorApplication
|
SWITCHING
|
Subcategory
|
FETGeneralPurposePower
|
RdsOn(Max)@Id,Vgs
|
4mΩ@60A,10V
|
Technology
|
MOSFET(MetalOxide)
|
Vgs(th)(Max)@Id
|
5V@8mA
|
TerminalPosition
|
SINGLE
|
InputCapacitance(Ciss)(Max)@Vd...
|
47500pF@25V
|
PeakReflowTemperature(Cel)
|
NOTSPECIFIED
|
Current-ContinuousDrain(Id)@25...
|
360ATc
|
ReachComplianceCode
|
unknown
|
GateCharge(Qg)(Max)@Vgs
|
715nC@10V
|
Time@PeakReflowTemperature-Max...
|
NOTSPECIFIED
|
PinCount
|
3
|
RiseTime
|
170ns
|
JESD-30Code
|
R-PSIP-T3
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
Vgs(Max)
|
±20V
|
FallTime(Typ)
|
265ns
|
Turn-OffDelayTime
|
115ns
|