IXTA26P20P
型號(hào): IXTA26P20P
類別: FET/MOSFET 單體
描述: Trans MOSFET P-CH 200V 26A 3-Pin(2+Tab) TO-263
品牌官網(wǎng):
- 賣盤信息
- 常見問(wèn)題
- 參數(shù)
-
平臺(tái)購(gòu)物流程是怎樣的?
平臺(tái)商品來(lái)源有保障嗎?
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參數(shù) | 數(shù)值 |
---|---|
FactoryLeadTime
|
28Weeks
|
Mount
|
SurfaceMount
|
Package/Case
|
TO-263-3,D2Pak(2Leads+Tab),TO-263AB
|
TransistorElementMaterial
|
SILICON
|
OperatingTemperature
|
-55°C~175°CTJ
|
Packaging
|
Tube
|
Published
|
2007
|
Series
|
PolarP?
|
JESD-609Code
|
e3
|
PbfreeCode
|
yes
|
PartStatus
|
Active
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
NumberofTerminations
|
2
|
ECCNCode
|
EAR99
|
TerminalFinish
|
MATTETIN(SN)
|
AdditionalFeature
|
AVALANCHERATED
|
Subcategory
|
OtherTransistors
|
Technology
|
MOSFET(MetalOxide)
|
TerminalForm
|
GULLWING
|
PinCount
|
4
|
JESD-30Code
|
R-PSSO-G2
|
NumberofElements
|
1
|
PowerDissipation-Max
|
300WTc
|
ElementConfiguration
|
Single
|
OperatingMode
|
ENHANCEMENTMODE
|
PowerDissipation
|
300W
|
CaseConnection
|
DRAIN
|
TransistorApplication
|
SWITCHING
|
RdsOn(Max)@Id,Vgs
|
170mΩ@13A,10V
|
Vgs(th)(Max)@Id
|
4V@250μA
|
InputCapacitance(Ciss)(Max)@Vd...
|
2740pF@25V
|
Current-ContinuousDrain(Id)@25...
|
26ATc
|
GateCharge(Qg)(Max)@Vgs
|
56nC@10V
|
RiseTime
|
33ns
|
DraintoSourceVoltage(Vdss)
|
200V
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
Vgs(Max)
|
±20V
|
FallTime(Typ)
|
21ns
|
Turn-OffDelayTime
|
46ns
|
ContinuousDrainCurrent(ID)
|
26A
|
GatetoSourceVoltage(Vgs)
|
20V
|
DraintoSourceBreakdownVoltage
|
-200V
|
PulsedDrainCurrent-Max(IDM)
|
70A
|
RadiationHardening
|
No
|
RoHSStatus
|
ROHS3Compliant
|
LeadFree
|
LeadFree
|