恒捷供應(yīng)鏈
IXTY08N100D2
加入對(duì)比型號(hào)： IXTY08N100D2
品牌： IXYS / LITTELFUSE
類(lèi)別： FET/MOSFET 單體
描述： IXTY08N100D2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from IXYS stock available at HK JDW
品牌官網(wǎng)：
- 賣(mài)盤(pán)信息
- 參數(shù)
- 常見(jiàn)問(wèn)題
| 參數(shù) | 數(shù)值 |
|---|---|
|
FactoryLeadTime
|
19Weeks
|
|
Mount
|
SurfaceMount
|
|
Package/Case
|
TO-252-3,DPak(2Leads+Tab),SC-63
|
|
NumberofPins
|
3
|
|
TransistorElementMaterial
|
SILICON
|
|
OperatingTemperature
|
-55°C~150°CTJ
|
|
Packaging
|
Tube
|
|
Published
|
2009
|
|
PbfreeCode
|
yes
|
|
PartStatus
|
Active
|
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
|
NumberofTerminations
|
2
|
|
TerminalFinish
|
PureTin(Sn)
|
|
Subcategory
|
FETGeneralPurposePower
|
|
Technology
|
MOSFET(MetalOxide)
|
|
TerminalPosition
|
SINGLE
|
|
TerminalForm
|
GULLWING
|
|
PeakReflowTemperature(Cel)
|
NOTSPECIFIED
|
|
Time@PeakReflowTemperature-Max...
|
NOTSPECIFIED
|
|
PinCount
|
4
|
|
JESD-30Code
|
R-PSSO-G2
|
|
QualificationStatus
|
NotQualified
|
|
NumberofElements
|
1
|
|
Configuration
|
SINGLEWITHBUILT-INDIODE
|
|
PowerDissipation-Max
|
60WTc
|
|
PowerDissipation
|
60W
|
|
CaseConnection
|
DRAIN
|
|
TransistorApplication
|
SWITCHING
|
|
RdsOn(Max)@Id,Vgs
|
21Ω@400mA,0V
|
|
InputCapacitance(Ciss)(Max)@Vd...
|
325pF@25V
|
|
Current-ContinuousDrain(Id)@25...
|
800mATc
|
|
GateCharge(Qg)(Max)@Vgs
|
14.6nC@5V
|
|
DraintoSourceVoltage(Vdss)
|
1000V
|
|
Vgs(Max)
|
±20V
|
|
ContinuousDrainCurrent(ID)
|
800mA
|
|
JEDEC-95Code
|
TO-252AA
|
|
GatetoSourceVoltage(Vgs)
|
20V
|
|
FETFeature
|
DepletionMode
|
|
RoHSStatus
|
ROHS3Compliant
|
|
LeadFree
|
LeadFree
|
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