恒捷供應(yīng)鏈
IXTP75N10P
加入對(duì)比型號(hào)： IXTP75N10P
品牌： IXYS / LITTELFUSE
類別： FET/MOSFET 單體
描述： IXYS SEMICONDUCTOR IXTP75N10P MOSFET Transistor, PolarFET, N Channel, 75 A, 100 V, 25 mohm, 10 V, 5.5 V
品牌官網(wǎng)：
- 賣盤信息
- 參數(shù)
- 常見問(wèn)題
| 參數(shù) | 數(shù)值 |
|---|---|
|
FactoryLeadTime
|
24Weeks
|
|
Mount
|
ThroughHole
|
|
Package/Case
|
TO-220-3
|
|
NumberofPins
|
3
|
|
TransistorElementMaterial
|
SILICON
|
|
OperatingTemperature
|
-55°C~175°CTJ
|
|
Packaging
|
Tube
|
|
Published
|
2004
|
|
Series
|
PolarHT?
|
|
JESD-609Code
|
e3
|
|
PbfreeCode
|
yes
|
|
PartStatus
|
Active
|
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
|
NumberofTerminations
|
3
|
|
ECCNCode
|
EAR99
|
|
Resistance
|
25MOhm
|
|
TerminalFinish
|
MatteTin(Sn)
|
|
AdditionalFeature
|
AVALANCHERATED
|
|
Technology
|
MOSFET(MetalOxide)
|
|
PinCount
|
3
|
|
NumberofElements
|
1
|
|
NumberofChannels
|
1
|
|
PowerDissipation-Max
|
360WTc
|
|
ElementConfiguration
|
Single
|
|
OperatingMode
|
ENHANCEMENTMODE
|
|
PowerDissipation
|
360W
|
|
CaseConnection
|
DRAIN
|
|
TurnOnDelayTime
|
27ns
|
|
TransistorApplication
|
SWITCHING
|
|
RdsOn(Max)@Id,Vgs
|
25mΩ@500mA,10V
|
|
Vgs(th)(Max)@Id
|
5.5V@250μA
|
|
InputCapacitance(Ciss)(Max)@Vd...
|
2250pF@25V
|
|
Current-ContinuousDrain(Id)@25...
|
75ATc
|
|
GateCharge(Qg)(Max)@Vgs
|
74nC@10V
|
|
RiseTime
|
53ns
|
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
|
Vgs(Max)
|
±20V
|
|
FallTime(Typ)
|
45ns
|
|
Turn-OffDelayTime
|
66ns
|
|
ContinuousDrainCurrent(ID)
|
75A
|
|
ThresholdVoltage
|
5.5V
|
|
JEDEC-95Code
|
TO-220AB
|
|
GatetoSourceVoltage(Vgs)
|
20V
|
|
DraintoSourceBreakdownVoltage
|
100V
|
|
PulsedDrainCurrent-Max(IDM)
|
200A
|
|
Height
|
9.15mm
|
|
RadiationHardening
|
No
|
|
REACHSVHC
|
NoSVHC
|
|
RoHSStatus
|
ROHS3Compliant
|
|
LeadFree
|
LeadFree
|
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