恒捷供應(yīng)鏈
IXFN200N10P
加入對比型號： IXFN200N10P
品牌： IXYS / LITTELFUSE
類別： FET/MOSFET 單體
描述： MOSFET N-CH 100V 200A SOT-227B
品牌官網(wǎng)：
- 賣盤信息
- 參數(shù)
- 常見問題
| 參數(shù) | 數(shù)值 |
|---|---|
|
FactoryLeadTime
|
30Weeks
|
|
Mount
|
ChassisMount
|
|
Package/Case
|
SOT-227-4,miniBLOC
|
|
NumberofPins
|
4
|
|
TransistorElementMaterial
|
SILICON
|
|
OperatingTemperature
|
-55°C~175°CTJ
|
|
Packaging
|
Tube
|
|
Published
|
2003
|
|
Series
|
Polar?
|
|
PbfreeCode
|
yes
|
|
PartStatus
|
Active
|
|
MoistureSensitivityLevel(MSL)
|
1(Unlimited)
|
|
NumberofTerminations
|
4
|
|
ECCNCode
|
EAR99
|
|
TerminalFinish
|
Nickel(Ni)
|
|
AdditionalFeature
|
AVALANCHERATED,ULRECOGNIZED
|
|
Technology
|
MOSFET(MetalOxide)
|
|
TerminalPosition
|
UPPER
|
|
TerminalForm
|
UNSPECIFIED
|
|
PeakReflowTemperature(Cel)
|
NOTSPECIFIED
|
|
ReachComplianceCode
|
unknown
|
|
Time@PeakReflowTemperature-Max...
|
NOTSPECIFIED
|
|
PinCount
|
4
|
|
QualificationStatus
|
NotQualified
|
|
NumberofElements
|
1
|
|
Configuration
|
SINGLEWITHBUILT-INDIODE
|
|
PowerDissipation-Max
|
680WTc
|
|
OperatingMode
|
ENHANCEMENTMODE
|
|
PowerDissipation
|
680W
|
|
CaseConnection
|
ISOLATED
|
|
TransistorApplication
|
SWITCHING
|
|
RdsOn(Max)@Id,Vgs
|
7.5mΩ@500mA,10V
|
|
Vgs(th)(Max)@Id
|
5V@8mA
|
|
InputCapacitance(Ciss)(Max)@Vd...
|
7600pF@25V
|
|
Current-ContinuousDrain(Id)@25...
|
200ATc
|
|
GateCharge(Qg)(Max)@Vgs
|
235nC@10V
|
|
RiseTime
|
35ns
|
|
DriveVoltage(MaxRdsOn,MinRdsOn...
|
10V
|
|
Vgs(Max)
|
±20V
|
|
FallTime(Typ)
|
90ns
|
|
Turn-OffDelayTime
|
150ns
|
|
ContinuousDrainCurrent(ID)
|
200A
|
|
ThresholdVoltage
|
5V
|
|
GatetoSourceVoltage(Vgs)
|
20V
|
|
Drain-sourceOnResistance-Max
|
0.0075Ohm
|
|
DraintoSourceBreakdownVoltage
|
100V
|
|
REACHSVHC
|
NoSVHC
|
|
RoHSStatus
|
ROHS3Compliant
|
|
LeadFree
|
LeadFree
|
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